HITACHI 2SK1153, 2SK1154 User Manual
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Application
High speed power switching
2SK1153, 2SK1154
Silicon N-Channel MOS FET
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
TO-220AB
1
D
G
2
3
1. Gate
2. Drain
(Flange)
3. Source
S
2SK1153, 2SK1154
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SK1153 V
DSS
2SK1154 500
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
450 V
±30 V
3A
12 A
3A
30 W
2
2SK1153, 2SK1154
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1153 V
(BR)DSS
breakdown voltage 2SK1154 500
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage 2SK1153 I
GSS
DSS
drain current 2SK1154 VDS = 400 V, VGS = 0
Gate to source cutoff voltage V
Static Drain to source 2SK1153 R
GS(off)
DS(on)
on stateresistance 2SK1154 — 2.2 3.0
Forward transfer admittance |yfs| 1.5 2.5 — S ID = 2 A, VDS = 10 V *
Input capacitance Ciss — 330 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 90 — pF f = 1 MHz
Reverse transfer capacitance Crss — 15 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
d(on)
r
d(off)
f
V
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
450 — — V ID = 10 mA, VGS = 0
±30——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 360 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 2.0 2.8 Ω ID = 2 A, VGS = 10 V *
—7 —nsI
= 2 A, VGS = 10 V,
D
— 20 — ns RL = 15 Ω
—30—ns
—20—ns
— 0.9 — V IF = 3 A, VGS = 0
— 300 — ns IF = 3 A, VGS = 0,
di
/dt = 100 A/µs
F
1
1
3
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