HITACHI 2SK1151-L-S, 2SK1152-L-S User Manual

2SK1151

2SK1151(L)(S), 2SK1152(L)(S)

Silicon N-Channel MOS FET

Application

High speed power switching

Features

•Low on-resistance

•High speed switching

•Low drive current

•No secondary breakdown

•Suitable for switching regulator and DC-DC converter

Outline

DPAK-1

4

4

1

2 3

1

2 3

D

1. Gate

G

2. Drain

3. Source

4. Drain

S

2SK1151(L)(S), 2SK1152(L)(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

2SK1151

VDSS

450

V

2SK1152

500

Gate to source voltage

VGSS

±30

V

Drain current

ID

1.5

A

Drain peak current

ID(pulse)*1

6

A

Body to drain diode reverse drain current

IDR

1.5

A

Channel dissipation

Pch*2

20

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1.

PW ≤ 10 s, duty cycle ≤ 1%

2.

Value at TC = 25°C

2

2SK1151(L)(S), 2SK1152(L)(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source

2SK1151

V(BR)DSS

450

—

—

V

I

D = 10 mA, VGS = 0

breakdown voltage

2SK1152

500

Gate to source breakdown

V(BR)GSS

±30

—

—

V

I

G = ±100 µA, VDS = 0

voltage

Gate to source leak current

IGSS

—

—

±10

µA

VGS = ±25 V, VDS = 0

Zero gate voltage

2SK1151

IDSS

—

—

100

µA

VDS = 360 V, VGS = 0

drain current

2SK1152

VDS = 400 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

2.0

—

3.0

V

I D = 1 mA, VDS = 10 V

Static Drain to source 2SK1151

RDS(on)

—

3.5

5.5

Ω

ID = 1 A, VGS = 10 V *1

on stateresistance

2SK1152

—

4.0

6.0

Forward transfer admittance

|yfs|

0.6

1.1

—

S

I D = 1 A, VDS = 20 V *1

Input capacitance

Ciss

—

160

—

pF

V

DS = 10 V, VGS = 0,

Output capacitance

Coss

—

45

—

pF

f = 1 MHz

Reverse transfer capacitance

Crss

—

5

—

pF

Turn-on delay time

td(on)

—

5

—

ns

I

D = 1 A, VGS = 10 V,

Rise time

tr

—

10

—

ns

R

L = 30 Ω

Turn-off delay time

td(off)

—

20

—

ns

Fall time

tf

—

10

—

ns

Body to drain diode forward

VDF

—

1.0

—

V

I

F = 1.5 A, VGS = 0

voltage

Body to drain diode reverse

trr

—

220

—

ns

I

F = 1.5 A, VGS = 0,

recovery time

diF/dt = 100 A/µs

Note: 1. Pulse test

3