HITACHI 2SK1151-L-S, 2SK1152-L-S User Manual
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Application
High speed power switching
Features
2SK1151(L)(S), 2SK1152(L)(S)
Silicon N-Channel MOS FET
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
DPAK-1
G
4
1
2
3
D
1
2
4
3
1. Gate
2. Drain
3. Source
4. Drain
S
2SK1151(L)(S), 2SK1152(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SK1151 V
DSS
2SK1152 500
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
450 V
±30 V
1.5 A
6A
1.5 A
20 W
2
2SK1151(L)(S), 2SK1152(L)(S)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1151 V
(BR)DSS
breakdown voltage 2SK1152 500
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage 2SK1151 I
GSS
DSS
drain current 2SK1152 VDS = 400 V, VGS = 0
Gate to source cutoff voltage V
Static Drain to source 2SK1151 R
GS(off)
DS(on)
on stateresistance 2SK1152 — 4.0 6.0
Forward transfer admittance |yfs| 0.6 1.1 — S ID = 1 A, VDS = 20 V *
Input capacitance Ciss — 160 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 45 — pF f = 1 MHz
Reverse transfer capacitance Crss — 5 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
d(on)
r
d(off)
f
V
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
450 — — V ID = 10 mA, VGS = 0
±30——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±25 V, VDS = 0
— — 100 µAVDS = 360 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 3.5 5.5 Ω ID = 1 A, VGS = 10 V *
—5 —nsI
= 1 A, VGS = 10 V,
D
— 10 — ns RL = 30 Ω
—20—ns
—10—ns
— 1.0 — V IF = 1.5 A, VGS = 0
— 220 — ns IF = 1.5 A, VGS = 0,
di
/dt = 100 A/µs
F
1
1
3
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