HITACHI 2SK1151-L-S, 2SK1152-L-S User Manual

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Application

High speed power switching

Features

2SK1151(L)(S), 2SK1152(L)(S)

Silicon N-Channel MOS FET

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

DPAK-1

G

4

1

2

3

D

1

2

4

3

1. Gate

2. Drain

3. Source

4. Drain

S

2SK1151(L)(S), 2SK1152(L)(S)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1151 V

DSS

2SK1152 500
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

450 V

±30 V

1.5 A
6A

1.5 A
20 W

2

2SK1151(L)(S), 2SK1152(L)(S)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SK1151 V

(BR)DSS

breakdown voltage 2SK1152 500
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage 2SK1151 I

GSS

DSS

drain current 2SK1152 VDS = 400 V, VGS = 0
Gate to source cutoff voltage V
Static Drain to source 2SK1151 R

GS(off)

DS(on)

on stateresistance 2SK1152 — 4.0 6.0
Forward transfer admittance |yfs| 0.6 1.1 — S ID = 1 A, VDS = 20 V *
Input capacitance Ciss — 160 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 45 — pF f = 1 MHz
Reverse transfer capacitance Crss — 5 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

d(on)

r

d(off)

f

V

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

450 — — V ID = 10 mA, VGS = 0

±30——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±25 V, VDS = 0

— — 100 µAVDS = 360 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 3.5 5.5 Ω ID = 1 A, VGS = 10 V *

—5 —nsI

= 1 A, VGS = 10 V,

D

— 10 — ns RL = 30 Ω
—20—ns
—10—ns

— 1.0 — V IF = 1.5 A, VGS = 0

— 220 — ns IF = 1.5 A, VGS = 0,

di

/dt = 100 A/µs

F

1

1

3

2SK1151(L)(S), 2SK1152(L)(S)

Power vs. Temperature Derating

30

20

10

Channel Dissipation Pch (W)

0

50 100 150

Case Temperature T

Typical Output Characteristics

(A)

D

2.0

1.6

1.2

Pulse Test

15 V

6 V

10 V

(°C)

C

5 V

4.5 V

Maximum Safe Operation Area

10

100 µs

1 ms

(A)

D

3

1.0

DC Operation (T

DS (on)

Operation in this

area is limited

by R

PW = 10ms (1 Shot)

0.3

C

0.1

= 25°C)

Drain Current I

0.03

0.01

Ta = 25°C

1 10 1,000

2SK1151

2SK1152

100

Drain to Source Voltage V

Typical Transfer Characteristics

2.0
V

DS

Pulse Test

(A)

D

1.6

1.2

10 µs

(V)

DS

= 20 V

0.8

Drain Current I

0.4

0

Drain to Source Voltage VDS (V)

4 V

V

= 3.5 V

GS

4 8 12 16 20

0.8

Drain Current I

75°C

0.4

0

Gate to Source Voltage V

–25°C

TC = 25°C

246810

(V)

GS

4

2SK1151(L)(S), 2SK1152(L)(S)

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

20

16

12

(V)

DS (on)

8

V

4

2 A

1 A

ID = 0.5 A

Drain to Source Saturation Voltage

0

4 8 12 16 20

Gate to Source Voltage VGS (V)

Static Drain to Source on State

Resistance vs. Temperature

10

ID = 2 A

V

= 10 V

GS

8

Pulse Test

Pulse Test

Static Drain to Source on State

Resistance vs. Drain Current

100

50

20

Pulse Test

V

GS

= 10 V

(Ω)

10

DS (on)

R

5

2
1

Static Drain to Source on State Resistance

0.1 0.2 0.5 1.0 5

0.05
Drain Current I

D

(A)

Forward Transfer Admittance

vs. Drain Current

5

V

= 20 V

2

DS

Pulse Test

–25°C

15 V

2

6

(Ω)

DS (on)

R

4

0.5 A

2

Static Drain-Source on State Resistance

0

–40

0 40 80 120 160

Case Temperature T

(°C)

C

1 A

1.0

0.5

0.2

0.1

Forward Transfer Admittance yfs (S)

0.05

TC = 25°C

75°C

0.1 0.2 1.0 2 5
Drain Current I

0.5

D

(A)

5

2SK1151(L)(S), 2SK1152(L)(S)

Body to Drain Diode Reverse

Recovery Time

1,000

di/dt = 100A/µs, Ta = 25°C

500

V

= 0

(ns)

rr

GS

Pulse Test

200

100

50

20

Reverse Recovery Time t

10

0.05 0.1 0.2 0.5 1.0 2 5
Reverse Drain Current I

Dynamic Input Characteristics

500

100 V

(V)

DS

400

V

DS

250 V
400 V

300

V

GS

200

V

= 400 V

100

Drain to Source Voltage V

0

DD

250 V

100 V

246810

Gate Charge Qg (nc)

(A)

DR

ID = 1.5 A

1,000

100

10

Capacitance C (pF)

1

0 1020304050

20

16

12

(V)

100

50

GS

20

10

8

5

4

0

Switching Time t (ns)

Gate to Source Voltage V

2
1

0.05 0.1 0.2 0.5 1.0 2 5

Typical Capacitance

vs. Drain to Source Voltage

V

GS

f = 1 MHz

Ciss

Coss

Crss

Drain to Source Voltage V

Switching Characteristics

V

= 10 V VDD = 30 V

GS

PW = 2 µs, duty < 1%

t

d (on)

t

Drain Current I

•

•

t

d (off)

t

f

r

(A)

D

= 0

DS

(V)

6

Reverse Drain Current vs.

Source to Drain Voltage

2.0

Pulse Test

1.6

(A)

DR

1.2

0.8

0.4

5 V,10 V

Reverse Drain Current I

VGS=0, –10V

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V

2SK1151(L)(S), 2SK1152(L)(S)

(V)

SD

(t)

S

1.0

3

D = 1

Normalized Transient Thermal Impedance vs. Pulse Width

T

C

= 25°C

0.5

0.3

0.2

0.1

0.03

0.1

0.05

0.02

0.01

1 Shot Pulse

θch–c(t) = γ
θch–c = 6.25°C/W, T

P

DM

PW

T

(t) · θch–c

S

C

D =

0.01
10 µ 100 µ 1 m 10 m 100 m 1 10

Normalized Transient Thermal Impedance γ

Pulse Width PW (s)

Switching Time Test Circuit

Vin Monitor

Wavewforms

Vout Monitor

D.U.T

R

L

Vin

Vout

10 %

10 %

50 Ω

Vin = 10 V

.

V

.

DD

= 30 V

t

d (on)

90 %
t

r

t

d (off)

90 %

= 25°C

PW

T

90 %

10 %

t

f

7

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

DPAK (L)-(1)
—
Conforms

0.42 g

Unit: mm

6.5 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

1.2 ± 0.3

0.55 ± 0.1

5.5 ± 0.5 1.7 ± 0.5

16.2 ± 0.5

3.1 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

2.29 ± 0.5 2.29 ± 0.5

0.8 ± 0.1

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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