HITACHI 2SK1095 User Manual
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2SK1095
Silicon N-Channel MOS FET
Application
High speed power switching
Features
TO–220FM
• Low on-resistance
• High speed switching
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• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
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1. Gate
2. Drain
3. Source
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Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
———————————————————————————————————————————
Drain to source voltage V
DSS
60 V
———————————————————————————————————————————
Gate to source voltage V
GSS
±20 V
———————————————————————————————————————————
Drain current I
D
25 A
———————————————————————————————————————————
Drain peak current I
D(pulse)
* 100 A
———————————————————————————————————————————
Body to drain diode reverse drain current I
DR
25 A
———————————————————————————————————————————
Channel dissipation Pch** 30 W
———————————————————————————————————————————
Channel temperature Tch 150 °C
———————————————————————————————————————————
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at T
= 25 °C
C
2SK1095
Table 2 Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown V
voltage
(BR)DSS
60 — — V ID= 10 mA, VGS= 0
———————————————————————————————————————————
Gate to source breakdown V
voltage
(BR)GSS
±20 — — V IG= ±100 µA, VDS= 0
———————————————————————————————————————————
Gate to source leak current I
GSS
— — ±10 µA VGS= ±16 V, VDS= 0
———————————————————————————————————————————
Zero gate voltage drain current I
DSS
— — 250 µA VDS= 50 V, VGS= 0
———————————————————————————————————————————
Gate to source cutoff voltage V
GS(off)
1.0 — 2.0 V ID= 1 mA, VDS= 10 V *
———————————————————————————————————————————
Static drain to source on state R
resistance
DS(on)
— 0.033 0.04 Ω ID= 15 A, VGS= 10 V *
——————— ——————————–
0.05 0.06 ID= 15 A, VGS= 4 V *
———————————————————————————————————————————
Forward transfer admittance |yfs| 1220—SI
= 15 A, VDS= 10 V
D
———————————————————————————————————————————
Input capacitance Ciss — 1400 — pF VDS= 10 V, VGS= 0,
————————————————————————————————
Output capacitance Coss — 720 — pF f = 1 MHz
————————————————————————————————
Reverse transfer capacitance Crss — 220 — pF
———————————————————————————————————————————
Turn-on delay time t
d(on)
— 15 — ns ID= 15 A, VGS= 10 V,
————————————————————————————————
Rise time t
r
— 130 — ns RL= 2 Ω
————————————————————————————————
Turn-off delay time t
d(off)
— 270 — ns
————————————————————————————————
Fall time t
f
— 180 — ns
———————————————————————————————————————————
Body to drain diode forward V
voltage
DF
— 1.3 — V IF= 25 A, VGS= 0
———————————————————————————————————————————
Body to drain diode reverse t
recovery time di
rr
— 135 — ns IF= 25 A, VGS= 0,
/dt = 50 A/µs
F
———————————————————————————————————————————
* Pulse Test
See characterist curves of 2SK972.
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