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查询2SK1094供应商
2SK1094
Silicon N-Channel MOS FET
Application
High speed power switching
Features
TO–220FM
• Low on-resistance
• High speed switching
2
• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
1
1. Gate
2. Drain
3. Source
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
———————————————————————————————————————————
Drain to source voltage V
DSS
60 V
———————————————————————————————————————————
Gate to source voltage V
GSS
±20 V
———————————————————————————————————————————
Drain current I
D
15 A
———————————————————————————————————————————
Drain peak current I
D(pulse)
*60 A
———————————————————————————————————————————
Body to drain diode reverse drain current I
DR
15 A
———————————————————————————————————————————
Channel dissipation Pch** 25 W
———————————————————————————————————————————
Channel temperature Tch 150 °C
———————————————————————————————————————————
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at T
= 25 °C
C
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2SK1094
Table 2 Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown V
voltage
(BR)DSS
60 — — V ID= 10 mA, VGS= 0
———————————————————————————————————————————
Gate to source breakdown V
voltage
(BR)GSS
±20 — — V IG= ±100 µA, VDS= 0
———————————————————————————————————————————
Gate to source leak current I
GSS
— — ±10 µA VGS= ±16 V, VDS= 0
———————————————————————————————————————————
Zero gate voltage drain current I
DSS
— — 250 µA VDS= 50 V, VGS= 0
———————————————————————————————————————————
Gate to source cutoff voltage V
GS(off)
1.0 — 2.0 V ID= 1 mA, VDS= 10 V
———————————————————————————————————————————
Static drain to source on state R
resistance
DS(on)
— 0.055 0.065 Ω ID= 8 A, VGS= 10 V *
——————— ——————————–
0.075 0.095 ID= 8 A, VGS= 4 V *
———————————————————————————————————————————
Forward transfer admittance |yfs| 7 12 — S ID= 8 A, VDS= 10 V *
———————————————————————————————————————————
Input capacitance Ciss — 860 — pF VDS= 10 V, VGS= 0,
————————————————————————————————
Output capacitance Coss — 450 — pF f = 1 MHz
————————————————————————————————
Reverse transfer capacitance Crss — 140 — pF
———————————————————————————————————————————
Turn-on delay time t
d(on)
— 10 — ns ID= 8 A, VGS= 10 V,
————————————————————————————————
Rise time t
r
— 70 — ns RL= 3.75 Ω
————————————————————————————————
Turn-off delay time t
d(off)
— 180 — ns
————————————————————————————————
Fall time t
f
— 120 — ns
———————————————————————————————————————————
Body to drain diode forward V
voltage
DF
— 1.3 — V IF= 15 A, VGS= 0
———————————————————————————————————————————
Body to drain diode reverse t
recovery time di
rr
— 135 — ns IF= 15 A, VGS= 0,
/dt = 50 A/µs
F
———————————————————————————————————————————
* Pulse Test
See characteristic curves of 2SK971.
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2SK1094
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1.0
0.1
0.03
0.01
0.3
10 µ 100 µ 1 m 10 m 100 m 1 10
Pulse Width PW (s)
0.05
0.02
0.2
0.1
0.5
D = 1
θch–c(t) = γS(t) · θch–c
θch–c = 5.0°C/W, T
C
=25°C
P
DM
PW
T
D =
T
PW
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ
S
(t)
1 Shot Pulse
TC = 25°C
0.01
Power vs. Temperature Derating
30
20
10
Channel Dissipation Pch (W)
0 50 100 150
Case Temperature TC (°C)
100
Maximum Safe Operation Area
30
(A)
10
D
3
1.0
Drain Current I
0.3
0.1
1 100
DS (on)
Operation in this
area is limited
by R
Ta = 25°C
0.3 1.0 3 10 30
PW = 10 ms (1 Shot)
DC Operation (T
Drain to Source Voltage V
100 µs
1 ms
C
= 25°C)
DS
10 µs
(V)
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