HITACHI 2SK1094 User Manual

2SK1094

2SK1094

Silicon N-Channel MOS FET

Application

High speed power switching

Features

•Low on-resistance

•High speed switching

•Low drive current

•4 V gate drive device

– Can be driven from 5 V source

•Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Table 1 Absolute Maximum Ratings (Ta = 25°C)

TO–220FM

2

1 2 3

1

1. Gate

2. Drain

3. Source

3

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

VDSS

60

V

———————————————————————————————————————————

Gate to source voltage

VGSS

±20

V

———————————————————————————————————————————

Drain current

ID

15

A

———————————————————————————————————————————

Drain peak current

ID(pulse)*

60

A

———————————————————————————————————————————

Body to drain diode reverse drain current

IDR

15

A

———————————————————————————————————————————

Channel dissipation

Pch**

25

W

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

*PW ≤ 10 µs, duty cycle ≤ 1 %

**Value at TC = 25 °C

2SK1094

Table 2 Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

———————————————————————————————————————————

Drain to source breakdown	V(BR)DSS 60	—	—	V	I D = 10 mA, VGS = 0
voltage

———————————————————————————————————————————

Gate to source breakdown	V(BR)GSS ±20	—	—	V	I G = ±100 µA, V DS = 0
voltage

———————————————————————————————————————————

Gate to source leak current IGSS — — ±10 µA V GS = ±16 V, VDS = 0

———————————————————————————————————————————

Zero gate voltage drain current IDSS — — 250 µA V DS = 50 V, VGS = 0

———————————————————————————————————————————

Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V I D = 1 mA, VDS = 10 V

———————————————————————————————————————————

Static drain to source on state RDS(on) —	0.055	0.065 Ω	ID = 8	A, VGS = 10 V *
resistance	———————		——————————–
	0.075	0.095	ID = 8	A, VGS = 4 V *

———————————————————————————————————————————

Forward transfer admittance |yfs| 7 12 — S I D = 8 A, VDS = 10 V *

———————————————————————————————————————————

Input capacitance	Ciss	—	860	—	pF	V DS = 10 V, VGS = 0,
————————————————————————————————
Output capacitance	Coss	—	450	—	pF	f = 1 MHz
————————————————————————————————
Reverse transfer capacitance	Crss	—	140	—	pF

———————————————————————————————————————————

Turn-on delay time	td(on)	—	10	—	ns	I	D = 8 A, VGS = 10 V,
————————————————————————————————							L = 3.75 Ω
Rise time	tr	—	70	—	ns	R
————————————————————————————————
Turn-off delay time	td(off)	—	180	—	ns
————————————————————————————————
Fall time	tf	—	120	—	ns

———————————————————————————————————————————

Body to drain diode forward	VDF	—	1.3	—	V	I F = 15 A, VGS = 0
voltage

———————————————————————————————————————————

Body to drain diode reverse	trr	—	135	—	ns	I F = 15 A, VGS = 0,
recovery time						diF/dt = 50 A/µs

———————————————————————————————————————————

* Pulse Test

See characteristic curves of 2SK971.