HITACHI 2SK1070 User Manual

2SK1070

2SK1070

Silicon N-Channel Junction FET

Application

Low frequency / High frequency amplifier

Outline

MPAK

3

		1	Drain
		1.
	2	2.	Source
		3.	Gate

2SK1070

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Gate to drain voltage	VGDO	–22	V
Gate to source voltage	VGSO	–22	V
Drain current	ID	50	mA
Gate current	IG	10	mA
Channel power dissipation	Pch	150	mW
Channel temperature	Tch	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Gate cutoff current

IGSS

—

—

–10

nA

V

GS = –15 V, VDS = 0

Gate to source breakdown

V(BR)GSS

–22

—

—

V

I

G = –10 A, VDS = 0

voltage

Drain current

IDSS*1

6

—

40

mA

V DS = 5 V, VGS = 0, Pulse test

Gate to source cutoff voltage VGS(off)

0

—

–2.5

V

V DS = 5

V, ID = 10 A

Forward transfer admittance

y

fs

20

30

—

mS

V DS = 5

V, VGS = 0, f = 1 kHz

Input capacitance

Ciss

—

9

—

pF

V

DS = 5

V, VGS = 0, f = 1 MHz

Note: 1. The 2SK1070 is grouped by IDSS as follows.

Grade

B

C

D

E

Mark

PIB

PIC

PID

PIE

IDSS

6 to 14

12 to 22

18 to 30

27 to 40

See characteristic curves of 2SK435.

2