2SJ319
2SJ319(L), 2SJ319(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
•Low on-resistance
•High speed switching
•Low drive current
•No secondary breakdown
•Suitable for switching regulator, DC-DC converter
Outline
DPAK-1
4
4
1
2 3
1
2 3
D
1. Gate
G
2. Drain
3. Source
4. Drain
S
2SJ319(L), 2SJ319(S)
Absolute Maximum Ratings (Ta = 25°C)
Item |
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Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
–200 |
V |
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Gate to source voltage |
VGSS |
±20 |
V |
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Drain current |
ID |
–3 |
A |
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Drain peak current |
ID(pulse)*1 |
–12 |
A |
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Body to drain diode reverse drain current |
IDR |
–3 |
A |
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Channel dissipation |
Pch*2 |
20 |
W |
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Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
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Notes: 1. |
PW ≤ 10 µs, duty cycle ≤ 1% |
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2. |
Value at TC = 25°C |
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Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
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Test conditions |
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Drain to source breakdown |
V(BR)DSS |
–200 |
— |
— |
V |
I |
D = –10 mA, VGS = 0 |
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voltage |
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Gate to source breakdown |
V(BR)GSS |
±20 |
— |
— |
V |
I |
G = ±100 µA, VDS = 0 |
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voltage |
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Gate to source leak current |
IGSS |
— |
— |
±10 |
µA |
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VGS = ±16 V, VDS = 0 |
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Zero gate voltage drain current |
IDSS |
— |
— |
–100 |
µA |
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VDS = –160 V, VGS = 0 |
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Gate to source cutoff voltage |
VGS(off) |
–2.0 |
— |
–4.0 |
V |
I D = –1 mA, VDS = –10 V |
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Static drain to source on state |
RDS(on) |
— |
1.7 |
2.3 |
Ω |
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ID = –2 A, VGS = –10 V*1 |
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resistance |
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Forward transfer admittance |
|y |
fs |
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1.0 |
1.7 |
— |
S |
I |
D |
= –2 A, V |
DS |
= –10 V*1 |
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Input capacitance |
Ciss |
— |
330 |
— |
pF |
V |
DS = –10 V, VGS = 0, |
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Output capacitance |
Coss |
— |
130 |
— |
pF |
f = 1 MHz |
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Reverse transfer capacitance |
Crss |
— |
25 |
— |
pF |
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Turn-on delay time |
td(on) |
— |
10 |
— |
ns |
I |
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D = –2 A, VGS = –10 V, |
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Rise time |
tr |
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— |
30 |
— |
ns |
R |
L = 15 Ω |
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Turn-off delay time |
td(off) |
— |
40 |
— |
ns |
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Fall time |
tf |
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— |
30 |
— |
ns |
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Body to drain diode forward |
VDF |
— |
–1.15 |
— |
V |
I |
F = –3 A, VGS = 0 |
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voltage |
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Body to drain diode reverse |
trr |
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— |
180 |
— |
ns |
I |
F = –3 A, VGS |
= 0, |
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recovery time |
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diF/dt = 50 A/µs |
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Note: 1. Pulse test
2
2SJ319(L), 2SJ319(S)
Power vs. Temperature Derating |
Maximum Safe Operation Area |
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20 |
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–50 |
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(W) |
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(A) |
–30 |
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15 |
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–10 |
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Pch |
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10 |
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D |
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100 |
µs |
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I |
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Channel Dissipation |
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Drain Current |
–3 |
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PW |
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1 |
µs |
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ms |
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10 |
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DC |
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= |
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–1 |
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10 |
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Operation |
ms |
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(1shot) |
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Operation in |
(Tc |
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5 |
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–0.3 |
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this area is |
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limited by RDS(on) |
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25 |
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–0.1 |
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°C) |
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Ta = 25 °C |
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–0.05 |
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0 |
50 |
100 |
150 |
200 |
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–1 |
–3 |
–10 |
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–30 |
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–100 |
–300 –500 |
Case Temperature Tc (°C) |
Drain to Source Voltage V DS (V) |
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–5 |
Typical Output Characteristics |
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–10 V |
–8 V |
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–6 V |
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(A) |
–4 |
Pulse Test |
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(A) |
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D |
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D |
I |
–3 |
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–5 V |
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I |
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CurrentDrain |
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CurrentDrain |
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–2 |
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–1 |
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–4 V |
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VGS = –3.5 V |
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Typical Transfer Characteristics
–5
25 °C
Tc = –25 °C
–4
75 °C
–3
–2
–1 |
V DS = –10 V |
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Pulse Test |
0 |
–4 |
–8 |
–12 |
–16 |
–20 |
0 |
–2 |
–4 |
–6 |
–8 |
–10 |
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Drain to Source Voltage |
VDS (V) |
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Gate to Source |
Voltage |
V GS (V) |
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