HITACHI 2SJ319-L, 2SJ319-S User Manual
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Application
High speed power switching
Features
2SJ319(L), 2SJ319(S)
Silicon P-Channel MOS FET
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter
Outline
DPAK-1
1
2
3
D
G
4
1
2
4
3
1. Gate
2. Drain
3. Source
4. Drain
S
2SJ319(L), 2SJ319(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 1.0 1.7 — S ID = –2 A, VDS = –10 V*
Input capacitance Ciss — 330 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 130 — pF f = 1 MHz
Reverse transfer capacitance Crss — 25 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
–200 — — V ID = –10 mA, VGS = 0
±20——V I
——±10 µAVGS = ±16 V, VDS = 0
— — –100 µAVDS = –160 V, VGS = 0
–2.0 — –4.0 V ID = –1 mA, VDS = –10 V
— 1.7 2.3 Ω ID = –2 A, VGS = –10 V*
— 10 — ns ID = –2 A, VGS = –10 V,
— 30 — ns RL = 15 Ω
—40—ns
—30—ns
— –1.15 — V IF = –3 A, VGS = 0
— 180 — ns IF = –3 A, VGS = 0,
–200 V
±20 V
–3 A
–12 A
–3 A
20 W
= ±100 µA, VDS = 0
G
di
/dt = 50 A/µs
F
1
1
2
2SJ319(L), 2SJ319(S)
Power vs. Temperature Derating
20
15
10
5
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
–5
–4
D
–10 V
Pulse Test
–8 V
–3
–6 V
–5 V
–50
Maximum Safe Operation Area
–30
D
–10
–3
PW = 10 ms (1shot)
DC Operation (Tc = 25 °C)
100 µs
1 ms
10 µs
–1
Drain Current I (A)
–0.3
–0.1
–0.05
Operation in
this area is
limited by R
DS(on)
Ta = 25 °C
–1 –3 –10 –30 –100 –300 –500
Drain to Source Voltage V (V)
Typical Transfer Characteristics
–5
–4
D
–3
Tc = –25 °C
75 °C
DS
25 °C
–2
Drain Current I (A)
–1
V = –3.5 V
–4 V
GS
0 –4 –8 –12 –16 –20
Drain to Source Voltage V (V)
DS
–2
Drain Current I (A)
–1
V = –10 V
DS
Pulse Test
0 –2–4–6–8–10
Gate to Source Voltage V (V)
GS
3
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