HITACHI 2SJ319-L, 2SJ319-S User Manual

2SJ319

2SJ319(L), 2SJ319(S)

Silicon P-Channel MOS FET

Application

High speed power switching

Features

•Low on-resistance

•High speed switching

•Low drive current

•No secondary breakdown

•Suitable for switching regulator, DC-DC converter

Outline

DPAK-1

4

4

1

2 3

1

2 3

D

1. Gate

G

2. Drain

3. Source

4. Drain

S

2SJ319(L), 2SJ319(S)

Absolute Maximum Ratings (Ta = 25°C)

Item		Symbol	Ratings	Unit
Drain to source voltage		VDSS	–200	V
Gate to source voltage		VGSS	±20	V
Drain current		ID	–3	A
Drain peak current		ID(pulse)*1	–12	A
Body to drain diode reverse drain current		IDR	–3	A
Channel dissipation		Pch*2	20	W
Channel temperature		Tch	150	°C
Storage temperature		Tstg	–55 to +150	°C
Notes: 1.	PW ≤ 10 µs, duty cycle ≤ 1%
2.	Value at TC = 25°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

V(BR)DSS

–200

—

—

V

I

D = –10 mA, VGS = 0

voltage

Gate to source breakdown

V(BR)GSS

±20

—

—

V

I

G = ±100 µA, VDS = 0

voltage

Gate to source leak current

IGSS

—

—

±10

µA

VGS = ±16 V, VDS = 0

Zero gate voltage drain current

IDSS

—

—

–100

µA

VDS = –160 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

–2.0

—

–4.0

V

I D = –1 mA, VDS = –10 V

Static drain to source on state

RDS(on)

—

1.7

2.3

Ω

ID = –2 A, VGS = –10 V*1

resistance

Forward transfer admittance

|y

fs

|

1.0

1.7

—

S

I

D

= –2 A, V

DS

= –10 V*1

Input capacitance

Ciss

—

330

—

pF

V

DS = –10 V, VGS = 0,

Output capacitance

Coss

—

130

—

pF

f = 1 MHz

Reverse transfer capacitance

Crss

—

25

—

pF

Turn-on delay time

td(on)

—

10

—

ns

I

D = –2 A, VGS = –10 V,

Rise time

tr

—

30

—

ns

R

L = 15 Ω

Turn-off delay time

td(off)

—

40

—

ns

Fall time

tf

—

30

—

ns

Body to drain diode forward

VDF

—

–1.15

—

V

I

F = –3 A, VGS = 0

voltage

Body to drain diode reverse

trr

—

180

—

ns

I

F = –3 A, VGS

= 0,

recovery time

diF/dt = 50 A/µs

Note: 1. Pulse test

2

2SJ319(L), 2SJ319(S)

Power vs. Temperature Derating

Maximum Safe Operation Area

20

–50

(W)

(A)

–30

15

–10

Pch

10

D

100

µs

I

Channel Dissipation

Drain Current

–3

PW

1

µs

ms

10

DC

=

–1

10

Operation

ms

(1shot)

Operation in

(Tc

5

–0.3

this area is

=

limited by RDS(on)

25

–0.1

°C)

Ta = 25 °C

–0.05

0

50

100

150

200

–1

–3

–10

–30

–100

–300 –500

Case Temperature Tc (°C)

Drain to Source Voltage V DS (V)

	–5	Typical Output Characteristics
		–10 V	–8 V
			–6 V
(A)	–4	Pulse Test		(A)
D				D
I	–3		–5 V
				I
CurrentDrain				CurrentDrain
	–2
	–1		–4 V
			VGS = –3.5 V

Typical Transfer Characteristics

–5

25 °C

Tc = –25 °C

–4

75 °C

–3

–2

–1	V DS = –10 V
	Pulse Test

0

–4

–8

–12

–16

–20

0

–2

–4

–6

–8

–10

Drain to Source Voltage

VDS (V)

Gate to Source

Voltage

V GS (V)

3