2SJ318L
2SJ318(L), 2SJ318(S)
Silicon P-Channel MOS FET
November 1996
Application
High speed power switching
Features
∙Low on-resistance
∙High speed switching
∙Low drive current
∙4 V gate drive device can be driven from 5 V source
∙Suitable for switching regulator, DC-DC converter
Outline
DPAK-1
4
4
1
2 3
1
2 3
D
1. Gate
G
2. Drain
3. Source
4. Drain
S
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2SJ318(L), 2SJ318(S)
Absolute Maximum Ratings (Ta = 25°C)
Item |
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Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
–20 |
V |
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Gate to source voltage |
VGSS |
±20 |
V |
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Drain current |
ID |
–5 |
A |
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Drain peak current |
ID(pulse)*1 |
–20 |
A |
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Body to drain diode reverse drain current |
IDR |
–5 |
A |
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Channel dissipation |
Pch*2 |
20 |
W |
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Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
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Notes 1. |
PW ≤ 10 µs, duty cycle ≤ 1% |
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2. |
Value at TC = 25°C |
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Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
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Test conditions |
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Drain to source breakdown |
V(BR)DSS |
–20 |
— |
— |
V |
I |
D = –10 mA, VGS = 0 |
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voltage |
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Gate to source breakdown |
V(BR)GSS |
±20 |
— |
— |
V |
I |
G = ±100 µA, VDS = 0 |
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voltage |
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Gate to source leak current |
IGSS |
— |
— |
±10 |
µA |
V |
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GS = ±16 V, VDS = 0 |
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Zero gate voltage drain current |
IDSS |
— |
— |
–100 |
µA |
V |
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DS = –16 V, VGS = 0 |
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Gate to source cutoff voltage |
VGS(off) |
–1.0 |
— |
–2.25 |
V |
I D = –1 mA, VDS = –10 V |
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Static drain to source on state |
RDS(on) |
— |
0.09 |
0.13 |
Ω |
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ID = –3 A, VGS = –10 V*1 |
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resistance |
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— |
0.14 |
0.19 |
Ω |
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ID = –3 A, VGS = –4 V*1 |
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Forward transfer admittance |
|y | |
3.5 |
5.5 |
— |
S |
I |
D |
= –3 A, V |
= –10 V*1 |
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fs |
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DS |
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Input capacitance |
Ciss |
— |
580 |
— |
pF |
V |
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DS = –10 V, VGS = 0, |
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Output capacitance |
Coss |
— |
520 |
— |
pF |
f = 1 MHz |
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Reverse transfer capacitance |
Crss |
— |
215 |
— |
pF |
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Turn-on delay time |
td(on) |
— |
10 |
— |
ns |
I |
D = –3 A, VGS = –10 V, |
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L = 3.3 Ω |
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Rise time |
tr |
— |
60 |
— |
ns |
R |
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Turn-off delay time |
td(off) |
— |
75 |
— |
ns |
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Fall time |
tf |
— |
75 |
— |
ns |
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Body to drain diode forward |
VDF |
— |
–1.1 |
— |
V |
I |
F = –5 A, VGS = 0 |
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voltage |
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Body to drain diode reverse |
trr |
— |
65 |
— |
µs |
I |
F = –5 A, VGS = 0, |
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recovery time |
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diF/dt = 50 A/µs |
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Note 1. Pulse test
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2SJ318(L), 2SJ318(S)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
20
15
10
5
0 |
50 |
100 |
150 |
200 |
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Ambient Temperature |
Ta (°C) |
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Maximum Safe Oeparation Area
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–30 |
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10 µs |
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100 µs |
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(A) |
–10 |
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PW |
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1ms |
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= |
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D |
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10 |
ms |
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–3 |
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DC |
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I |
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(Tc |
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= |
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Operation |
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Current |
–1 |
Operation in this area |
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25°C) |
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is limited by R DS(on) |
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Drain |
–0.3 |
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–0.1 |
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Ta = 25 °C |
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–0.3 |
–1 |
–3 |
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–10 |
–30 |
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Drain to Source Voltage |
V DS |
(V) |
Drain Current I D (A)
Typical Output Charactristics –10V
–10
–5 V
Pulse Test
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–8 |
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–4 |
V |
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–3.5 V |
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–6 |
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–4 |
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–3 V |
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–2 |
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VGS = –2.5 V |
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0 |
–2 |
–4 |
–6 |
–8 |
–10 |
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Drain to Source Voltage |
V DS (V) |
3
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