HITACHI 2SJ318-L, 2SJ318-S User Manual

2SJ318L

2SJ318(L), 2SJ318(S)

Silicon P-Channel MOS FET

November 1996

Application

High speed power switching

Features

∙Low on-resistance

∙High speed switching

∙Low drive current

∙4 V gate drive device can be driven from 5 V source

∙Suitable for switching regulator, DC-DC converter

Outline

DPAK-1

4

4

1

2 3

1

2 3

D

1. Gate

G

2. Drain

3. Source

4. Drain

S

Download from www.ICminer.com Electronic-Library Service

2SJ318(L), 2SJ318(S)

Absolute Maximum Ratings (Ta = 25°C)

Item		Symbol	Ratings	Unit
Drain to source voltage		VDSS	–20	V
Gate to source voltage		VGSS	±20	V
Drain current		ID	–5	A
Drain peak current		ID(pulse)*1	–20	A
Body to drain diode reverse drain current		IDR	–5	A
Channel dissipation		Pch*2	20	W
Channel temperature		Tch	150	°C
Storage temperature		Tstg	–55 to +150	°C
Notes 1.	PW ≤ 10 µs, duty cycle ≤ 1%
2.	Value at TC = 25°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit			Test conditions
Drain to source breakdown	V(BR)DSS	–20	—	—	V	I		D = –10 mA, VGS = 0
voltage
Gate to source breakdown	V(BR)GSS	±20	—	—	V	I		G = ±100 µA, VDS = 0
voltage
Gate to source leak current	IGSS	—	—	±10	µA	V			GS = ±16 V, VDS = 0
Zero gate voltage drain current	IDSS	—	—	–100	µA	V			DS = –16 V, VGS = 0
Gate to source cutoff voltage	VGS(off)	–1.0	—	–2.25	V	I D = –1 mA, VDS = –10 V
Static drain to source on state	RDS(on)	—	0.09	0.13	Ω			ID = –3 A, VGS = –10 V*1
resistance		—	0.14	0.19	Ω			ID = –3 A, VGS = –4 V*1
Forward transfer admittance	|y |	3.5	5.5	—	S	I		D	= –3 A, V	= –10 V*1
	fs									DS
Input capacitance	Ciss	—	580	—	pF	V			DS = –10 V, VGS = 0,
Output capacitance	Coss	—	520	—	pF	f = 1 MHz
Reverse transfer capacitance	Crss	—	215	—	pF
Turn-on delay time	td(on)	—	10	—	ns	I		D = –3 A, VGS = –10 V,
									L = 3.3 Ω
Rise time	tr	—	60	—	ns	R
Turn-off delay time	td(off)	—	75	—	ns
Fall time	tf	—	75	—	ns
Body to drain diode forward	VDF	—	–1.1	—	V	I		F = –5 A, VGS = 0
voltage
Body to drain diode reverse	trr	—	65	—	µs	I		F = –5 A, VGS = 0,
recovery time								diF/dt = 50 A/µs

Note 1. Pulse test

Download from www.ICminer.com Electronic-Library Service

2SJ318(L), 2SJ318(S)

Channel Dissipation Pch (W)

Power vs. Temperature Derating

20

15

10

5

0	50	100	150	200
	Ambient Temperature		Ta (°C)

Maximum Safe Oeparation Area

	–30						10 µs
							100 µs
(A)	–10					PW		1ms
							=
D							10	ms
	–3				DC
I
				(Tc
					=
						Operation
Current	–1	Operation in this area				25°C)
		is limited by R DS(on)
Drain	–0.3
	–0.1		Ta = 25 °C
	–0.3		–1	–3			–10		–30
			Drain to Source Voltage				V DS		(V)

Drain Current I D (A)

Typical Output Charactristics –10V

–10

–5 V

Pulse Test

–8

–4

V

–3.5 V

–6

–4

–3 V

–2

VGS = –2.5 V

0	–2	–4	–6	–8	–10
	Drain to Source Voltage			V DS (V)

3

Download from www.ICminer.com Electronic-Library Service