HITACHI 2SJ317 User Manual
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Application
High speed power switching
Low voltage operation
2SJ317
Silicon P-Channel MOS FET
Features
• Very low on-resistance
• High speed switching
• Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
Outline
UPAK
1
2
3
4
D
G
S
1. Gate
2. Drain
3. Source
4. Drain
2SJ317
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Value on the alumina ceramic board (12.5×20×0.7 mm).
3. Marking is “NY”.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source cutoff current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
GSS
DSS
GS(off)
DS(on)1
DS(on)2
Forward transfer admittance |yfs| 1.0 2.3 — S ID = –1 A*1, VDS = –5 V
Input capacitance Ciss — 63 — pF VDS = –5 V, VGS = 0,
Output capacitance Coss — 180 — pF f = 1 MHz
Reverse transfer capacitance Crss — 23 — pF
Turn-on time t
Turn-off time t
on
off
Note: 1. Pulse test
–12 — — V ID = –1 mA, VGS = 0
±7——V I
——±5µAVGS = ±6.5 V, VDS = 0
——–1µAVDS = –8 V, VGS = 0
–0.4 — –1.4 V ID = –100 µA, VDS = –5 V
— 0.4 0.7 Ω ID = –0.5 A*1, VGS = –2.2 V
— 0.28 0.35 Ω ID = –1 A*1, VGS = –4 V
— 500 — ns ID = –0.2 A*1, Vin = –4 V,
— 2860 — ns RL = 51 Ω
–12 V
–7 V
±2A
±4A
2A
1W
= ±10 µA, VDS = 0
G
2
2SJ317
Maximun Power Dissipation Curve
2.0
1.5
1.0
0.5
Channel Power Dissipation Pch (W)
(on the aluminam ceramic board)
0 50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–5
–5
–4
D
–3
–4
–3
–2.5
Pulse test
–2
–10
Operation in this Area
is limited by R
DS(on)
PW = 1 ms
1 shot
–3
Maximun Safe Operation Area
DC Operation
D
–1
(Tc=25°C)
–0.3
–0.1
Drain Current I (A)
–0.03
–0.01
Ta = 25°C
–0.1 –0.3 –1.0 –3 –10 –30 –100
Drain to Source Voltage V (V)
DS
Typical Forward Transfer Characteristics
–5
Ta = –25°C
–4
25°C
D
–3
75°C
–2
Drain Current I (A)
–1
–1.5
V = –1 V
GS
0 –2 –4 –6 –8 –10
Drain to Source Voltage V (V)
DS
–2
Drain Current I (A)
–1
V = –5 V
DS
Pulse test
0–1–2–3–4–5
Gate to Source Voltage V (V)
GS
3
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