HITACHI 2SJ278 User Manual

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Application

High speed power switching

Features

2SJ278

Silicon P-Channel MOS FET

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device can be driven from 5 V source

• Suitable for switching regulator, DC-DC converter

Outline

UPAK

2

3

D

G

1

4

1. Gate

2. Drain

3. Source

4. Drain

S

2SJ278

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5×20×0.7 mm)

3. Marking is “MY”.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R

GSS

DSS

GS(off)

DS(on)

resistance — 0.9 1.2 Ω ID = –0.5 A, VGS = –4 V*
Forward transfer admittance |yfs| 0.6 1.0 — S ID = –0.5 A, VDS = –10 V*
Input capacitance Ciss — 160 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 80 — pF f = 1 MHz
Reverse transfer capacitance Crss — 28 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time

–60 — — V ID = –10 mA, VGS = 0

±20——V I

——±5µAVGS = ±16 V, VDS = 0
— — –10 µAVDS = –50 V, VGS = 0
–1.0 — –2.25 V ID = –1 mA, VDS = –10 V
— 0.7 0.83 Ω ID = –0.5 A, VGS = –10 V*

—7 —nsI
—8 —nsR
—30—ns
—25—ns
— –1.1 — V IF = –1 A, VGS = 0

— 90 — ns IF = –1 A, VGS = 0,

–60 V
±20 V
–1 A
–4 A
–1 A
1W

= ±100 µA, VDS = 0

G

= –0.5 A, VGS = –10 V,

D

= 60 Ω

L

di

/dt = 50 A/µs

F

1

1

1

2

2SJ278

Power vs. Temperature Derating

2.0

1.5

1.0

0.5

Channel Dissipation Pch (W)

(on the aluminam ceramic board)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

–2.0

–10 V

–6 V

–1.6

D

–4 V

–1.2

Pulse Test

–3 V

Maximum Safe Operation Area

–5
–3

–1

D

DC Operation

100 µs

PW = 10 ms (1shot)

1 ms

–0.3

Operation in

–0.1

Drain Current I (A)

–0.03

–0.01

this area is
limited by R

Ta = 25 °C

DS(on)

–0.005

–0.1 –0.3 –1 –3 –10 –30 –100

Drain to Source Voltage V (V)

Typical Transfer Characteristics

–1.0

V = –10 V

DS

–0.8

D

–0.6

Pulse Test

10 µs

DS

–0.8

–2.5 V

Drain Current I (A)

–0.4

V = –2 V

GS

0 –2 –4 –6 –8 –10

Drain to Source Voltage V (V)

DS

75 °C

–0.4

Drain Current I (A)

–0.2

25 °C

Tc = –25 °C

0 –1–2–3–4–5

Gate to Source Voltage V (V)

GS

3

2SJ278

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–1.0

I = –1 A

–0.8

DS(on)

V (V)

D

-0.6

-0.4

–0.2

Drain to Source Saturation Voltage

0 –2 –4 –6 –8 –10

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

2.0

Ω

Pulse Test

1.6

DS(on)

R ( )

1.2
V = –4 V

GS

–1 A

Pulse Test

–0.5 A

–0.2 A

GS

–0.5 A
–0.2 A

–1 A

Static Drain to Source on State Resistance

vs. Drain Current

5

Pulse Test

2

V = –4 V

DS(on)

1

R ( )Ω

0.5

GS

–10 V

0.2

0.1

Drain to Source On State Resistance

0.05
–0.05 –0.1 –0.2 –0.5 –1 –2 –5

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

5

fs

2
1

Tc = –25 °C

25 °C

0.5

75 °C

0.8
–10 V

–0.5 A
–0.2 A

0.4

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

4

0.2
V = –10 V

0.1

Forward Transfer Admittance |y | (S)

0.05

–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1

Drain Current I (A)

DS

Pulse Test

D

2SJ278

Body–Drain Diode Reverse

Recovery Time

500

di/dt = 50 A/µs
V = 0, duty < 1 %

200

GS

100

50

20
10

Reverse Recovery Time trr (ns)

5

–0.02 –0.05 –0.1 –0.2 –0.5 –1 –2

Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

0

V = –10 V

DD

–25 V

–20

DS

–40 V

1000

100

10

Capacitance C (pF)

GS

500

200

0

–4

Typical Capacitance vs.

Drain to Source Voltage

Ciss

Coss

Crss

V = 0

GS

f = 1 MHz

1

0 –10 –20 –30 -40 –50

Drain to Source Voltage V (V)

DS

Switching Characteristics

V = –10 V, V = –30 V

GS

DD

PW = 2 µs, duty < 1 %

–40

–60

V

DS

V = –10 V

DD

ID = –1A

–25 V
–40 V

–80

Drain to Source Voltage V (V)

0 4 8 12 16 20

Gate Charge Qg (nc)

100

–8

50

t

d(off)

t

f

–12

V

GS

–16

–20–100

20

Switching Time t (ns)

10

Gate to Source Voltage V (V)

5

–0.01 –0.02 –0.05 –0.1

t

d(on)

–0.2

Drain Current I (A)

D

t

r

–0.5 –1

5

2SJ278

DR

–1.0

–0.8

–0.6

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

–10 V

–5 V

–0.4

V = 0, 5 V

GS

–0.2

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Drain to Source Voltage V (V)

DS

Switching Time Test Circuit Waveforms

Vin Monitor

Vin
–10 V

D.U.T.

50Ω

Vout
Monitor

R

L

V

DD

= –30 V

Vin

Vout

td(on)

10%

90%

10%

tr

td(off)

90%

90%

10%

t

f

6

4.5 ± 0.1

1.8 Max

1.5 ± 0.1

0.44 Max

0.44 Max

0.48 Max

0.53 Max

1.5

1.5

3.0

2.5 ± 0.1

4.25 Max

0.8 Min

φ

1

0.4

(1.5)

(2.5)

(0.4)

(0.2)

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

UPAK
—
Conforms

0.050 g

Unit: mm

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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