HITACHI 2SJ278 User Manual

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Application

High speed power switching

Features

2SJ278

Silicon P-Channel MOS FET

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device can be driven from 5 V source

• Suitable for switching regulator, DC-DC converter

Outline

UPAK

2

3

D

G

1

4

1. Gate

2. Drain

3. Source

4. Drain

S

2SJ278

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5×20×0.7 mm)

3. Marking is “MY”.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R

GSS

DSS

GS(off)

DS(on)

resistance — 0.9 1.2 Ω ID = –0.5 A, VGS = –4 V*
Forward transfer admittance |yfs| 0.6 1.0 — S ID = –0.5 A, VDS = –10 V*
Input capacitance Ciss — 160 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 80 — pF f = 1 MHz
Reverse transfer capacitance Crss — 28 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time

–60 — — V ID = –10 mA, VGS = 0

±20——V I

——±5µAVGS = ±16 V, VDS = 0
— — –10 µAVDS = –50 V, VGS = 0
–1.0 — –2.25 V ID = –1 mA, VDS = –10 V
— 0.7 0.83 Ω ID = –0.5 A, VGS = –10 V*

—7 —nsI
—8 —nsR
—30—ns
—25—ns
— –1.1 — V IF = –1 A, VGS = 0

— 90 — ns IF = –1 A, VGS = 0,

–60 V
±20 V
–1 A
–4 A
–1 A
1W

= ±100 µA, VDS = 0

G

= –0.5 A, VGS = –10 V,

D

= 60 Ω

L

di

/dt = 50 A/µs

F

1

1

1

2

2SJ278

Power vs. Temperature Derating

2.0

1.5

1.0

0.5

Channel Dissipation Pch (W)

(on the aluminam ceramic board)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

–2.0

–10 V

–6 V

–1.6

D

–4 V

–1.2

Pulse Test

–3 V

Maximum Safe Operation Area

–5
–3

–1

D

DC Operation

100 µs

PW = 10 ms (1shot)

1 ms

–0.3

Operation in

–0.1

Drain Current I (A)

–0.03

–0.01

this area is
limited by R

Ta = 25 °C

DS(on)

–0.005

–0.1 –0.3 –1 –3 –10 –30 –100

Drain to Source Voltage V (V)

Typical Transfer Characteristics

–1.0

V = –10 V

DS

–0.8

D

–0.6

Pulse Test

10 µs

DS

–0.8

–2.5 V

Drain Current I (A)

–0.4

V = –2 V

GS

0 –2 –4 –6 –8 –10

Drain to Source Voltage V (V)

DS

75 °C

–0.4

Drain Current I (A)

–0.2

25 °C

Tc = –25 °C

0 –1–2–3–4–5

Gate to Source Voltage V (V)

GS

3