HITACHI 2SJ248 User Manual

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Application

High speed power switching

Features

2SJ248

Silicon P-Channel MOS FET

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device can be driven from 5 V source

• Suitable for switching regulator, DC-DC converter

Outline

TO-220FM

D

G

1

2

3

1. Gate

2. Drain

3. Source

S

2SJ248

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

–100 V
±20 V
–8 A
–32 A
–8 A
25 W

2