HITACHI 2SJ247 User Manual

2SJ247

2SJ247

Silicon P-Channel MOS FET

Application

High speed power switching

Features

•Low on-resistance

•High speed switching

•Low drive current

•4 V gate drive device can be driven from 5 V source

•Suitable for switching regulator, DC-DC converter

Outline

TO-220AB

D	1	2 3

1. Gate

G

2. Drain

(Flange)

3. Source

S

2SJ247

Absolute Maximum Ratings (Ta = 25°C)

Item		Symbol	Ratings	Unit
Drain to source voltage		VDSS	–100	V
Gate to source voltage		VGSS	±20	V
Drain current		ID	–8	A
Drain peak current		ID(pulse)*1	–32	A
Body to drain diode reverse drain current		IDR	–8	A
Channel dissipation		Pch*2	40	W
Channel temperature		Tch	150	°C
Storage temperature		Tstg	–55 to +150	°C
Notes: 1.	PW ≤ 10 µs, duty cycle ≤ 1%
2.	Value at TC = 25°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

V(BR)DSS

–100

—

—

V

I

D = –10 mA, VGS = 0

voltage

Gate to source breakdown

V(BR)GSS

±20

—

—

V

I

G = ±100 µA, VDS = 0

voltage

Gate to source leak current

IGSS

—

—

±10

µA

VGS = ±16 V, VDS = 0

Zero gate voltage drain current

IDSS

—

—

–250

µA

VDS = –80 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

–1.0

—

–2.0

V

I D = –1 mA, VDS = –10 V

Static drain to source on state

RDS(on)

—

0.25

0.3

Ω

ID = –4 A, VGS = –10 V*1

resistance

—

0.3

0.45

Ω

ID = –4 A, VGS = –4 V*1

Forward transfer admittance

|y

fs

|

3.0

5.5

—

S

I

D

= –4 A, V

DS

= –10 V*1

Input capacitance

Ciss

—

880

—

pF

V

DS = –10 V, VGS = 0,

Output capacitance

Coss

—

325

—

pF

f = 1 MHz

Reverse transfer capacitance

Crss

—

80

—

pF

Turn-on delay time

td(on)

—

12

—

ns

I

D = –4 A, VGS = –10 V,

Rise time

tr

—

47

—

ns

R

L = 7.5 Ω

Turn-off delay time

td(off)

—

150

—

ns

Fall time

tf

—

75

—

ns

Body to drain diode forward

VDF

—

–1.0

—

V

I

F = –8 A, VGS = 0

voltage

Body to drain diode reverse

trr

—

170

—

ns

I

F = –8 A, VGS

= 0,

recovery time

diF/dt = 50 A/µs

2

2SJ247

	60	Power vs. Temperature Derating				–50
						–30
(W)						–10
Pch					(A)
	40
DissipationChannel					D	–3
					CurrentDrainI
						–1
	20					–0.3
						–0.1
					–0.05
	0	50	100	150		–1
		Case Temperature Tc (°C)

Maximum Safe Operation Area

					10	μs
					100
PW				1	μ
						s
	=			ms
		10
DC
			ms
(Tc
	Operation
=				(1
					Shot)
	25°C)
Operation in
this area
is limited						Ta = 25°C
by RDS (on)

–3 –10 –30 –100 –300 –1000

Drain to Source Voltage VDS (V)

Drain Current ID (A)

–20	Typical Output Characteristics					–10	Typical Transfer Characteristics
	–10 V			Pulse Test
		–6 V
							Pulse Test		–25°C
–16			–4.5 V			–8				Tc = 75°C
							VDS = –10 V
					(A)
										25°C
–12			–4 V		D	–6
					I
–8			–3.5 V		Current	–4
–4			–3 V		Drain	–2
			–2.5 V
0	–4	–8	–12	–16	–20	0	–2	–4	–6	–8	–10
	Drain to Source Voltage VDS (V)						Gate to Source Voltage VGS (V)

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