HITACHI 2SJ244 User Manual

2SJ244

2SJ244

Silicon P-Channel MOS FET

Application

High speed power switching

Low voltage operation

Features

•Very Low on-resistance

•High speed switching

•Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.

Outline

	UPAK
	2	1
	3
			4
	D
	G	1.	Gate
		2.	Drain
		3.	Source
		4.	Drain

S

2SJ244

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Drain to source voltage	VDSS	–12	V
Gate to source voltage	VGSS	±7	V
Drain current	ID	±2	A
Drain peak current	ID(pulse)*1	±4	A
Channel dissipation	Pch*2	1	W
Channel temperature	Tch	150	°C
Storage temperature	Tstg	–55 to +150	°C
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%

2.Value on the alumina ceramic board (12.5×20×0.7 mm)

3.Marking is “JY”.

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit			Test conditions
Drain to source breakdown	V(BR)DSS	–12	—	—	V	I		D = –1 mA, VGS = 0
voltage
Gate to source breakdown	V(BR)GSS	±7	—	—	V	I		G = ±10 µA, VDS = 0
voltage
Gate to source cutoff current	IGSS	—	—	±5	µA			VGS = ±6 V, VDS = 0
Zero gate voltage drain current	IDSS	—	—	–1	µA			VDS = –8 V, VGS = 0
Gate to source cutoff voltage	VGS(off)	–0.4	—	–1.4	V	I D = –100 µA, VDS = –5 V
Static drain to source on state	RDS(on)1	—	0.65	0.9	Ω			ID = –0.5 A*1, VGS = –2.5 V
resistance
Static drain to source on state	RDS(on)2	—	0.5	—	Ω			ID = –1 A*1, VGS = –4 V
resistance
Forward transfer admittance	|yfs|	—	1.8	—	S	I		D = –1 A*1, VDS = –5 V
Input capacitance	Ciss	—	130	—	pF	V			DS = –5 V, VGS = 0,
Output capacitance	Coss	—	50	—	pF	f = 1 MHz
Reverse transfer capacitance	Crss	—	260	—	pF
Turn-on delay time	t(on)	—	365	—	ns	I		D = –0.2 A*1, Vin = –4 V,
Turn-off delay time	t(off)	—	1450	—	ns	R			L = 51 Ω
Body to drain diode forward	V	—	—	7	V	I		F	= 4 A*1, V	GS	= 0
	DF

voltage

Note: 1. Pulse test

2

2SJ244

)W ( board) Pch
DissipationPower	ceramicalumina the
Channel	(on

Maximum Channel Power Dissipation Curve

2.0

1.5

1.0

0.5

0	50	100	150	200
	Ambient Temperature		Ta ( °C )

Maximum Safe Operation Area

	-10	Operation in this Area
		is limited by RDS(on)		PW = 1 ms 1 shot
	-3
A )	-1.0		DC
(
			Operation
D
I
Current	-0.3			(Ta=25°C)
Drain	-0.1
	-0.03
	-0.01	-0.3	-1.0	-3	-10	-30 -100
	-0.1
		Drain to Source Voltage			V DS (V)

**on the alumina ceramic board

	Typical Output Characteristics
	-5
	-5	-4	-3.5
	- 4.5
				)
A )	-4
				( A
(			-3
				D
D
	-3			I
I
Current	-2		-2.5	Current
Drain			-2	Drain
	-1
		Pulse Test	VGS = -1.5 V

Typical Forward Transfer Characteristics

-5
VDS = -5 V	Ta = -25 °C

		Pulse Test
-4							+25
							+75
-3
-2
-1

0	-2	-4	-6	-8	-10					0													-1	-2	-3	-4	-5
	Drain to Source Voltage VDS				( V )																		Gate to Source Voltage VGS			( V )

3