HITACHI 2SJ222 User Manual
2SJ222
2SJ222
Silicon P-Channel MOS FET
Application
High speed power switching
Features
•Low on-resistance
•High speed switching
•Low drive current
•4 V gate drive device
Can be driven from 5 V source
•Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D |
1 2 3 |
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1. Gate
G
2. Drain
3. Source
S
2SJ222
Absolute Maximum Ratings (Ta = 25°C)
Item |
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Symbol |
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Ratings |
Unit |
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Drain to source voltage |
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VDSS |
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–100 |
V |
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Gate to source voltage |
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VGSS |
±20 |
V |
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Drain current |
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ID |
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–20 |
A |
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Drain peak current |
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ID(pulse)*1 |
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–80 |
A |
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Body to drain diode reverse drain current |
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IDR |
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–20 |
A |
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Channel dissipation |
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Pch*2 |
35 |
W |
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Channel temperature |
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Tch |
150 |
°C |
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Storage temperature |
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Tstg |
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–55 to +150 |
°C |
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Notes: 1. |
PW ≤ 10 s, duty cycle ≤ 1% |
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2. |
Value at TC = 25°C |
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