HITACHI 2SJ221 User Manual
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Application
High speed power switching
Features
2SJ221
Silicon P-Channel MOS FET
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220AB
1
D
G
2
3
1. Gate
2. Drain
(Flange)
3. Source
S
2SJ221
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R
GSS
DSS
GS(off)
DS(on)
resistance — 0.16 0.22 ID = –10 A, VGS = –4 V*
Forward transfer admittance |yfs| 7.5 12 — S ID = –10 A, VDS = –10 V*
Input capacitance Ciss — 1800 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 680 — pF f = 1 MHz
Reverse transfer capacitance Crss — 145 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
–100 — — V ID = –10 mA, VGS = 0
±20——V I
——±10 µAVGS = ±16 V, VDS = 0
— — –250 µAVDS = –80 V, VGS = 0
–1.0 — –2.0 V ID = –1 mA, VDS = –10 V
— 0.12 0.16 Ω ID = –10 A, VGS = –10 V*
— 15 — ns ID = –10 A, VGS = –10 V,
— 115 — ns RL = 3 Ω
— 320 — ns
— 170 — ns
— –1.05 — V IF = –20 A, VGS = 0
— 280 — ns IF = –20 A, VGS = 0,
–100 V
±20 V
–20 A
–80 A
–20 A
75 W
= ±100 µA, VDS = 0
G
di
/dt = 50 A/µs
F
1
1
1
2
2SJ221
Power vs. Temperature Derating
120
80
40
Channel Dissipation Pch (W)
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
–50
–40
(A)
D
–30
–8 V–10 V
–6 V
–5 V
Pulse Test
–100
Maximum Safe Operation Area
–30
(A)
D
–10
DC Operation (T
–3
Ta = 25°C
–1
Drain Current I
Operation in this Area
–0.3
is Limited by R
–0.1
–1
–3 –10 –30 –100 –300
Drain to Source Voltage V
Typical Transfer Characteristics
–20
V
–16
(A)
D
–12
DS
Pulse Test
10 µs
100 µs
PW = 10 ms (1 Shot)
1 ms
C
= 25°C)
DS (on)
= –10 V
DS
–1,000
(V)
–20
Drain Current I
–10
Drain to Source Voltage VDS (V)
V
–4 –12 –160
–8 –20
GS
–4 V
= –3 V
–8
Drain Current I
–4
–1 –3 –40
Gate to Source Voltage VGS (V)
75°C
TC = 25°C
–25°C
–2 –5
3
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