HITACHI 2SJ221 User Manual

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Application

High speed power switching

Features

2SJ221

Silicon P-Channel MOS FET

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device
 Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

TO-220AB

1

D

G

2

3

1. Gate

2. Drain
(Flange)

3. Source

S

2SJ221

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R

GSS

DSS

GS(off)

DS(on)

resistance — 0.16 0.22 ID = –10 A, VGS = –4 V*
Forward transfer admittance |yfs| 7.5 12 — S ID = –10 A, VDS = –10 V*
Input capacitance Ciss — 1800 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 680 — pF f = 1 MHz
Reverse transfer capacitance Crss — 145 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

–100 — — V ID = –10 mA, VGS = 0

±20——V I

——±10 µAVGS = ±16 V, VDS = 0
— — –250 µAVDS = –80 V, VGS = 0
–1.0 — –2.0 V ID = –1 mA, VDS = –10 V
— 0.12 0.16 Ω ID = –10 A, VGS = –10 V*

— 15 — ns ID = –10 A, VGS = –10 V,
— 115 — ns RL = 3 Ω
— 320 — ns
— 170 — ns
— –1.05 — V IF = –20 A, VGS = 0

— 280 — ns IF = –20 A, VGS = 0,

–100 V
±20 V
–20 A
–80 A
–20 A
75 W

= ±100 µA, VDS = 0

G

di

/dt = 50 A/µs

F

1

1

1

2

2SJ221

Power vs. Temperature Derating

120

80

40

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature TC (°C)

Typical Output Characteristics

–50

–40

(A)

D

–30

–8 V–10 V

–6 V

–5 V

Pulse Test

–100

Maximum Safe Operation Area

–30

(A)

D

–10

DC Operation (T

–3

Ta = 25°C

–1

Drain Current I

Operation in this Area

–0.3

is Limited by R

–0.1

–1

–3 –10 –30 –100 –300

Drain to Source Voltage V

Typical Transfer Characteristics

–20

V

–16

(A)

D

–12

DS

Pulse Test

10 µs

100 µs

PW = 10 ms (1 Shot)

1 ms

C

= 25°C)

DS (on)

= –10 V

DS

–1,000

(V)

–20

Drain Current I

–10

Drain to Source Voltage VDS (V)

V

–4 –12 –160

–8 –20

GS

–4 V

= –3 V

–8

Drain Current I

–4

–1 –3 –40

Gate to Source Voltage VGS (V)

75°C

TC = 25°C

–25°C

–2 –5

3

2SJ221

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

(V)

–10

DS (on)

–8

Pulse Test

–6

–4

–20 A

–2

–10 A

ID = –5 A

–4 –12 –160

Drain to Source Saturation Voltage V

–8 –20

Gate to Source Voltage VGS (V)

Static Drain to Source on State

Resistance vs. Case Temperature

1.0

0.8

0.6

(Ω)

DS (on)

0.4

R

0.2

Pulse Test

ID = –20 A

–5, –10 A

VGS = –4 V

VGS = –10 V –5, –10 A

0

Static Drain to Source on State Resistance

0 80 120

–40

40 160

Case Temperature TC (°C)

–20 A

Static Drain to Source on State

Resistance vs. Drain Current
5
3

Pulse Test

1

0.3

(Ω)

0.1

DS (on)

R

V

GS

= –4 V

–10 V

0.03

0.01

0.005

Static Drain to Source on State Resistance

–0.1

–0.3 –1 –3 –10 –30

Drain Current I

D

(A)

Forward Transfer Admittance

vs. Drain Current

100

VDS = –10 V
Pulse Test

30

–25°C

TC = 25°C

10

3

75°C

1

0.3

Forward Transfer Admittance yfs (S)

0.5
–0.3 –1 –3 –10 –30

–0.1

Drain Current I

D

(A)

–100

–100

4

2SJ221

Body to Drain Diode Reverse

Recovery Time
5,000
3,000

(ns)

rr

1,000

di/dt = 50 A/µs, Ta = 25°C

= 0,

V

GS

300

100

30

Reverse Recovery Time t

10

5
–0.1

–0.3 –1 –3 –10 –30

Reverse Drain Current I

Dynamic Input Characteristics

(V)

–20

DS

0

VDD = –10 V
–25 V
–50 V

–40

V

DS

–60

V

–80

Drain to Source Voltage V

–100

20 60 800

40 100

Gate Charge Qg (nc)

VDD = –50 V
–25 V
–10 V

GS

(A)

DR

ID = –20 A

10,000

Capacitance C (pF)

–100

0

5,000
3,000

(V)

–4

GS

1,000

–8

–12

–16

Switching Time t (ns)

Gate to Source Voltage V

–20

1,000

100

10

300

100

30

10

Typical Capacitance vs.
Drain to Source Voltage

Ciss

Coss

Crss

0

–20 –50

–10 –30 –40

Drain to Source Voltage V

Switching Characteristics

V

= 10 V, V

GS

PW = 2 µs, duty 1%

t

f

t

r

5
–0.1

–0.3 –1 –3 –10 –30

Drain Current I

t

d (off)

t

d (on)

D

DD

(A)

VGS = 0
f = 1 MHz

(V)

DS

.

–30 V

=

.

<

=

–100

5

2SJ221

Reverse Drain Current vs.

Source to Drain Voltage

–50

Pulse Test

–40

(A)

DR

–30

–20

–10 V

–10

–5 V

Reverse Drain Current I

–0.8 –2.0

–0.4 –1.2 –1.6

0

Source to Drain Voltage V

V

GS

= 0, 5 V

SD

(V)

(t)

S

Normalized Transient Thermal Impedance γ

1.0

0.3

0.1

0.03

0.01

3

0.01

10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

1 Shot Pulse

100 µ 10 m 100 m 1 101 m

Switching Time Test Circuit

Vin Monitor

50 Ω

Vin
–10 V

Normalized Transient Thermal Impedance vs. Pulse Width

θch–c (t) = γ
θch–c = 1.67°C/W, T

P

DM

Pulse Width PW (s)

Waveforms

Vin

Vout Monitor

10%

D.U.T

R

L

V

DD

.

=

–30 V

.

Vout
t

d (on)

90%

10%

td

t

(off)

r

(t) · θch–c

S

PW

T

90%

90%

TC = 25°C

C

10%

t

f

= 25°C

PW

D =

T

6

0.5 ± 0.1

2.54 ± 0.5

0.76 ± 0.1

14.0 ± 0.5 15.0 ± 0.3

2.79 ± 0.218.5 ± 0.57.8 ± 0.5

10.16 ± 0.2

2.54 ± 0.5

1.26 ± 0.15

4.44 ± 0.2

2.7 MAX

1.5 MAX

11.5 MAX

9.5

8.0

1.27

6.4

+0.2

–0.1

φ 3.6

+0.1

-0.08

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-220AB
Conforms
Conforms

1.8 g

Unit: mm

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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