HITACHI 2SJ218 User Manual

2sj218

2SJ218

Silicon P-Channel MOS FET

Application

High speed power switching

Features

·Low on-resistance

·High speed switching

·4 V gate drive device

¾ Can be driven from 5 V source

·Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

2SJ218

Absolute Maximum Ratings (Ta = 25°C)

Item		Symbol	Ratings	Unit
Drain to source voltage		VDSS	–60	V
Gate to source voltage		VGSS	±20	V
Drain current		ID	–45	A
Drain peak current		ID(pulse)*1	–180	A
Body to drain diode reverse drain current		IDR	–45	A
Channel dissipation		Pch*2	60	W
Channel temperature		Tch	150	°C
Storage temperature		Tstg	–55 to +150	°C
Notes: 1.	PW ≤ 10 µs, duty cycle ≤ 1%
2.	Value at TC = 25°C

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