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Application
High speed power switching
Features
2SJ218
Silicon P-Channel MOS FET
• Low on-resistance
• High speed switching
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
2SJ218
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
–60 V
±20 V
–45 A
–180 A
–45 A
60 W
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2SJ218
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance — 0.045 0.06 ID = –20 A, VGS = –4 V*
Forward transfer admittance |yfs| 16 25 — S ID = –20 A, VDS = –10 V*
Input capacitance Ciss — 3800 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 2000 — pF f = 1 MHz
Reverse transfer capacitance Crss — 490 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note: 1. Pulse test
V
(BR)DSS
V
(BR)GSS
GSS
DSS
GS(off)
DS(on)
d(on)
r
d(off)
f
V
DF
t
rr
–60 — — V ID = –10 mA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
— — ±10 µA VGS = ±16 V, VDS = 0
— — –250 µA VDS = –50 V, VGS = 0
–1.0 — –2.0 V ID = –1 mA, VDS = –10 V
— 0.033 0.042 Ω ID = –20 A, VGS = –10 V*
— 30 — ns ID = –20 A, VGS = –10 V,
— 235 — ns RL = 1.5 Ω
— 670 — ns
— 450 — ns
— –1.35 — V IF = –45 A, VGS = 0
— 300 — ns IF = –45 A, VGS = 0,
diF/dt = 50 A/µs
1
1
1
See characteristic curves of 2SJ217
3
2SJ218
4
2SJ218
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1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products
are requested to notify the relevant Hitachi sales offices when planning to use the products in
MEDICAL APPLICATIONS.
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