HITACHI 2SJ217 User Manual
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Application
High speed power switching
Features
2SJ217
Silicon P-Channel MOS FET
November 1996
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-3P
D
G
S
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
2SJ217
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R
GSS
DSS
GS(off)
DS(on)
resistance — 0.045 0.06 ID = –20 A, VGS = –4 V*
Forward transfer admittance |yfs|1625—S I
Input capacitance Ciss — 3800 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 2000 — pF f = 1 MHz
Reverse transfer capacitance Crss — 490 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note 1. Pulse test
–60 — — V ID = –10 mA, VGS = 0
±20——V I
——±10 µAVGS = ±16 V, VDS = 0
— — –250 µAVDS = –50 V, VGS = 0
–1.0 — –2.0 V ID = –1 mA, VDS = –10 V
— 0.033 0.042 Ω ID = –20 A, VGS = –10 V*
— 30 — ns ID = –20 A, VGS = –10 V,
— 235 — ns RL = 1.5 Ω
— 670 — ns
— 450 — ns
— –1.35 — V IF = –45 A, VGS = 0
— 300 — ns IF = –45 A, VGS = 0,
–60 V
±20 V
–45 A
–180 A
–45 A
150 W
= ±100 µA, VDS = 0
G
= –20 A, VDS = –10 V*
D
di
/dt = 50 A/µs
F
1
1
1
2
2SJ217
Power vs. Temperature Derating
150
100
50
Channel Dissipation Pch (W)
0 50 100 150
Case Temperature T
(°C)
C
Typical Output Characteristics
–100
–80
(A)
D
–60
–10 V
–6 V
–5 V
Pulse Test
–4 V
–200
Maximum Safe Operation Area
–100
–50
(A)
D
Operation in this area
DS (on)
is limited by R
PW = 10 ms (1 shot)
1 ms
DC Operation (T
–20
–10
Drain Current I
–5
C
= 25°C)
Ta = 25°C
–2
–2 –5 –10 –20 –50 –100
–1
Drain to Source Voltage V
Typical Forward Transfer Characteristics
–50
–40
(A)
D
–30
V
Pulse Test
DS
TC = –25°C
= –10 V
10 µs
100 µs
DS
(V)
25°C
75°C
–40
Drain Current I
–20
–4 –12 –160
Drain to Source Voltage V
–3 V
VGS = –2 V
–8 –20
(V)
DS
–20
Drain Current I
–10
–1 –3 –40
Gate to Source Voltage V
–2 –5
(V)
GS
3
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