HITACHI 2SJ175 User Manual
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Application
High speed power switching
Features
2SJ175
Silicon P-Channel MOS FET
November 1996
Low on-resistance
•
High speed switching
•
Low drive current
•
4 V gate drive device
•
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
•
Outline
TO-220FM
D
1
2
3
G
S
1. Gate
2. Drain
3. Source
2SJ175
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
Channel dissipation Pch*
1
*
2
–60 V
±20 V
–10 A
–40 A
–10 A
25 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
2
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