查询2SJ175供应商
Application
High speed power switching
Features
2SJ175
Silicon P-Channel MOS FET
November 1996
Low on-resistance
•
High speed switching
•
Low drive current
•
4 V gate drive device
•
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
•
Outline
TO-220FM
D
1
2
3
G
S
1. Gate
2. Drain
3. Source
2SJ175
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
Channel dissipation Pch*
1
*
2
–60 V
±20 V
–10 A
–40 A
–10 A
25 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
2
2SJ175
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
–60 — — V ID = –10 mA, VGS = 0
voltage
Gate to source breakdown
V
(BR)GSS
±20——V I
= ±100 µA, VDS = 0
G
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
— — ±10 µA VGS = ±16 V, VDS = 0
— — –250 µA VDS = –50 V, VGS = 0
–1.0 — –2.0 V ID = –1 mA, VDS = –10 V
— 0.13 0.18 Ω ID = –5 A, VGS = –10 V*
resistance
— 0.18 0.25 ID = –5 A, VGS = –4 V*
Forward transfer admittance |yfs| 4.0 6.5 — S ID = –5 A, VDS = –10 V*
Input capacitance Ciss — 900 — pF VDS = –10 V, VGS = 0,
f = 1 MHz
Output capacitance Coss — 460 — pF
Reverse transfer capacitance Crss — 130 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
—8 —nsI
= –5 A, VGS = –10 V,
D
= 6 Ω
R
L
—65—ns
— 170 — ns
— 105 — ns
—–1.1—V I
= –10 A, VGS = 0
F
voltage
Body to drain diode reverse
recovery time
t
rr
— 200 — ns IF = –10 A, VGS = 0,
/dt = 50 A/µs
di
F
Note 1. Pulse test
1
1
1
See characteristic curves of 2SJ172
3
2SJ175
Power vs. Temperature Derating
30
20
10
Channel Dissipation Pch (W)
(t)
Normalized Transient Thermal Impedance γ
S
0.03
0.01
3
1.0
0.3
0.1
10 µ
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
0 50 100 150
Case Temperature T
Maximum Safe Operation Area
–100
–30
(A)
–10
D
–3
–1.0
Operation in this area
Drain Current I
is limited by R
–0.3
Ta = 25°C
–1.0 –10 –100
–0.3 –3 –30
–0.1
Drain to Source Voltage V
Normalized Transient Thermal Impedance vs. Pulse Width
100 µ 10 m 100 m 1 101 m
Pulse Width PW (s)
(°C)
C
PW = 10 ms (1 shot)
1 ms
DC Operation (T
C
= 25°C)
DS(on)
DS
100 µs
10 µs
(V)
θch–c (t) = γS (t) · θch–c
θch–c = 5.0°C/W, T
P
DM
PW
T
TC = 25°C
C
= 25°C
D =
PW
T
4
2SJ175
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1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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