HITACHI 2SJ172 User Manual

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Application

High speed power switching

Features

2SJ172

Silicon P-Channel MOS FET

November 1996

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device
 Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline



TO-220AB

1

D

G

2

3

1. Gate

2. Drain
(Flange)

3. Source

S

2SJ172

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R

GSS

DSS

GS(off)

DS(on)

resistance — 0.18 0.25 ID = –5 A, VGS = –4 V*
Forward transfer admittance |yfs| 4.0 6.5 — S ID = –5 A, VDS = –10 V*
Input capacitance Ciss — 900 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 460 — pF f = 1 MHz
Reverse transfer capacitance Crss — 130 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse test

–60 — — V ID = –10 mA, VGS = 0

±20——V I

——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = –50 V, VGS = 0
–1.0 — –2.0 V ID = –1 mA, VDS = –10 V
— 0.13 0.18 Ω ID = –5 A, VGS = –10 V*

—8 —nsI
— 65 — ns RL = 6 Ω
— 170 — ns
— 105 — ns
— –1.1 — V IF = –10 A, VGS = 0

— 200 — ns IF = –10 A, VGS = 0,

–60 V
±20 V
–10 A
–40 A
–10 A
40 W

= ±100 µA, VDS = 0

G

= –5 A, VGS = –10 V,

D

di

/dt = 50 A/µs

F

1

1

1

2

2SJ172

Power vs. Temperature Derating

60

40

20

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

(°C)

C

Typical Output Characteristics

–20

–16

(A)

D

–12

–10 V

–4.5 V

–5 V

–7 V

Pulse Test

–4 V

–100

Maximum Safe Operation Area

–30

PW = 10 ms (1 shot)

(A)

–10

D

DC Operation (T

–3

–1.0

Drain Current I

Operation in this area
is limited by R

DS(on)

–0.3

Ta = 25°C

–0.1

–0.1 –0.3 –3 –30

–1.0 –10 –100

Drain to Source Voltage V

Typical Transfer Characteristics

–10

V

= –10 V

DS

Pulse Test

–8

(A)

D

–6

100 µs

1 ms

C

= 25°C)

DS

10 µs

(V)

–8

Drain Current I

–4

0

Drain to Source Voltage V

–3.5 V

–3 V

VGS = –2.5 V

–8 –20

–4 –12 –16

DS

(V)

–4

Drain Current I

–2

0

TC = 25°C

–1 –3 –4

Gate to Source Voltage V

75°C

–25°C

–2 –5

GS

(V)

3

2SJ172

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

(V)

–2.0

DS (on)

–1.6

Pulse Test

ID = –10 A

–1.2

–0.8

–0.4

–2 –6 –80

Drain to Source Saturation Voltage V

–4 –10

Gate to Source Voltage V

Static Drain to Source on State

Resistance vs. Temperature

0.5

Pulse Test

0.4

0.3

(Ω)

DS (on)

0.2

R

0.1

V

V

GS

= –10 V

GS

= –4 V

–5 A

–2 A

(V)

GS

ID = –10 A

–5 A
–2 A

–10 A
–5 A

–2 A

Static Drain to Source on State

Resistance vs. Drain Current

5

Pulse Test

2

1.0

(Ω)

0.5

DS (on)

R

0.2

V

= –4 V

GS

–10 V

0.1

0.05

Static Drain to Source on State Resistance

–2 –50

–1.0 –5 –20–0.5

Drain Current I

–10

D

(A)

Forward Transfer Admittance

vs. Drain Current

50

V

= 10 V

GS

Pulse Test

20

10

–25°C

TC = 25°C

75°C

5

2

1.0

0

Static Drain to Source on State Resistance

–40

40 160

0 80 120

Case Temperature T

4

(°C)

C

Forward Transfer Admittance yfs (S)

0.5
–0.1

–0.5 –10

–0.2 –1.0 –5

Drain Current ID (A)

–2

2SJ172

Body to Drain Diode Reverse

Recovery Time

500

(ns)

200

rr

100

50

di/dt = 50 A/µs, Ta = 25°C

20

V

= 0

GS

Pulse Test

10

Reverse Recovery Time t

5
–0.2

–1.0 –20

–0.5 –2 –10

Reverse Drain Current I

Dynamic Input Characteristics

0

V

= –10 V

DD

–50 V

V

DS

–25 V

V

GS

(V)

–20

DS

–40

–60

–80

Drain to Source Voltage V

–100

2006080

40 100

Gate Charge Qg (nc)

–5

V

DD

–25 V

–10 V

(A)

DR

ID = –10 A

= –50 V

10,000

1,000

100

Capacitance C (pF)

(V)

GS

500

200

0

–4

100

–8

50

–12

20

–16

Switching Time t (ns)

Gate to Source Voltage V

10

–20

Typical Capacitance vs.
Drain to Source Voltage

10

0

–10 –30 –40

–20 –50

Drain to Source Voltage V

Switching Characteristics

t

d (off)

t

f

t

r

PW = 10 µs, V
duty < 1% V

t

d (on)

5

–0.5 –2 –10

–0.2

–1.0 –20

Drain Current I

Ciss
Coss

Crss

D

–5
(A)

V

= 0

GS

f = 1 MHz

(V)

DS

= –10 V

GS

.

=

.

30V

DD

5

2SJ172



Reverse Drain Current vs.

Source to Drain Voltage

–20

(t)

S

Normalized Transient Thermal Impedance γ

3

1.0

0.3

0.1

0.03

0.01

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

10 µ

–16

(A)

DR

–12

Reverse Drain Current I

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 10 m 100 m 1 10

Pulse Test

–8

–4

0

–10 V

–5 V

–0.4 –1.2 –1.6

–0.8 –2.0

Source to Drain Voltage V

1 m

Pulse Width PW (s)

V

GS

= 0, 5 V

(V)

SD

T

= 25°C

C

θch–c (t) = γ
θch–c = 3.13°C/W, TC = 25°C

P

DM

T

(t) · θch–c

S

PW

D =

PW

T

Waveforms

Switching Time Test Circuit

Vin Monitor

D.U.T

50 Ω

Vin
–10 V

Vout Monitor

R

L

V

DD

.

=

30 V

.

Vin

Vout

t

d (on)

10%

10%

90%

t

r

t

d (off)

90%

90%

10%

t

f

6

2SJ172

When using this document, keep the following in mind:

1. This document may, wholly or partially, be subject to change without notice.

2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.

3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.

4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.

5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.

6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.

Hitachi, Ltd.

Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo [phone]
Fax: [phone]

For further information write to:

Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
U S A
Tel: [phone]
Fax: [phone]



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
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