HITACHI 2SJ172 User Manual
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Application
High speed power switching
Features
2SJ172
Silicon P-Channel MOS FET
November 1996
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220AB
1
D
G
2
3
1. Gate
2. Drain
(Flange)
3. Source
S
2SJ172
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R
GSS
DSS
GS(off)
DS(on)
resistance — 0.18 0.25 ID = –5 A, VGS = –4 V*
Forward transfer admittance |yfs| 4.0 6.5 — S ID = –5 A, VDS = –10 V*
Input capacitance Ciss — 900 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 460 — pF f = 1 MHz
Reverse transfer capacitance Crss — 130 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note 1. Pulse test
–60 — — V ID = –10 mA, VGS = 0
±20——V I
——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = –50 V, VGS = 0
–1.0 — –2.0 V ID = –1 mA, VDS = –10 V
— 0.13 0.18 Ω ID = –5 A, VGS = –10 V*
—8 —nsI
— 65 — ns RL = 6 Ω
— 170 — ns
— 105 — ns
— –1.1 — V IF = –10 A, VGS = 0
— 200 — ns IF = –10 A, VGS = 0,
–60 V
±20 V
–10 A
–40 A
–10 A
40 W
= ±100 µA, VDS = 0
G
= –5 A, VGS = –10 V,
D
di
/dt = 50 A/µs
F
1
1
1
2
2SJ172
Power vs. Temperature Derating
60
40
20
Channel Dissipation Pch (W)
0 50 100 150
Case Temperature T
(°C)
C
Typical Output Characteristics
–20
–16
(A)
D
–12
–10 V
–4.5 V
–5 V
–7 V
Pulse Test
–4 V
–100
Maximum Safe Operation Area
–30
PW = 10 ms (1 shot)
(A)
–10
D
DC Operation (T
–3
–1.0
Drain Current I
Operation in this area
is limited by R
DS(on)
–0.3
Ta = 25°C
–0.1
–0.1 –0.3 –3 –30
–1.0 –10 –100
Drain to Source Voltage V
Typical Transfer Characteristics
–10
V
= –10 V
DS
Pulse Test
–8
(A)
D
–6
100 µs
1 ms
C
= 25°C)
DS
10 µs
(V)
–8
Drain Current I
–4
0
Drain to Source Voltage V
–3.5 V
–3 V
VGS = –2.5 V
–8 –20
–4 –12 –16
DS
(V)
–4
Drain Current I
–2
0
TC = 25°C
–1 –3 –4
Gate to Source Voltage V
75°C
–25°C
–2 –5
GS
(V)
3
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