HITACHI 2SJ172 User Manual

2SJ172

2SJ172

Silicon P-Channel MOS FET

November 1996

Application

High speed power switching

Features

•Low on-resistance

•High speed switching

•Low drive current

•4 V gate drive device

Can be driven from 5 V source

•Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

TO-220AB

D	1	2 3

1. Gate

G

2. Drain

(Flange)

3. Source

S

2SJ172

Absolute Maximum Ratings (Ta = 25°C)

Item		Symbol	Ratings	Unit
Drain to source voltage		VDSS	–60	V
Gate to source voltage		VGSS	±20	V
Drain current		ID	–10	A
Drain peak current		ID(pulse)*1	–40	A
Body to drain diode reverse drain current		IDR	–10	A
Channel dissipation		Pch*2	40	W
Channel temperature		Tch	150	°C
Storage temperature		Tstg	–55 to +150	°C
Notes 1.	PW ≤ 10 µs, duty cycle ≤ 1%
2.	Value at TC = 25°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit		Test conditions
Drain to source breakdown	V(BR)DSS	–60	—	—	V		ID = –10 mA, VGS = 0
voltage
Gate to source breakdown	V(BR)GSS	±20	—	—	V		IG = ±100 µA, VDS = 0
voltage
Gate to source leak current	IGSS	—	—	±10	µA		VGS = ±16 V, VDS = 0
Zero gate voltage drain current	IDSS	—	—	250	µA		VDS = –50 V, VGS = 0
Gate to source cutoff voltage	VGS(off)	–1.0	—	–2.0	V		ID = –1 mA, VDS = –10 V
Static drain to source on state	RDS(on)	—	0.13	0.18	Ω		ID = –5 A, VGS = –10 V*1
resistance		—	0.18	0.25			ID = –5 A, VGS = –4 V*1
Forward transfer admittance	|yfs|	4.0	6.5	—	S		ID = –5 A, VDS = –10 V*1
Input capacitance	Ciss	—	900	—	pF		VDS = –10 V, VGS = 0,
Output capacitance	Coss	—	460	—	pF		f = 1 MHz
Reverse transfer capacitance	Crss	—	130	—	pF
Turn-on delay time	td(on)	—	8	—	ns		ID = –5 A, VGS = –10 V,
Rise time	tr	—	65	—	ns		RL = 6 Ω
Turn-off delay time	td(off)	—	170	—	ns
Fall time	tf	—	105	—	ns
Body to drain diode forward	VDF	—	–1.1	—	V		IF = –10 A, VGS = 0
voltage
Body to drain diode reverse	trr	—	200	—	ns		IF = –10 A, VGS = 0,
recovery time							diF/dt = 50 A/µs

Note 1. Pulse test

2

2SJ172

Power vs. Temperature Derating

	60
(W)
Pch	40
Dissipation	20
Channel
	0	50	100	150
		Case Temperature TC (°C)

		Typical Output Characteristics
	–20		Pulse Test
	–10 V	–4.5 V
	–16	–5 V
		–7 V	–4 V
	(A)

D
I	–12
Current
				–3.5 V
Drain	–8
				–3	V
	–4
			VGS = –2.5 V
	0	–4	–8	–12			–16	–20
		Drain to Source Voltage					VDS (V)

Maximum Safe Operation Area

	–100
									10 μs
	–30							100
(A)				PW					μ
	–10						1		s
D				=
								ms
					10
I				DC
Current						ms
	–3			Operation				(1
									shot)
							(T
Drain
	–1.0							C	=
		Operation in this area							25
									°
		is limited by RDS(on)							C)
	–0.3	Ta = 25°C
	–0.1		–1.0		–10					–100
	–0.1	–0.3		–3					–30

Drain to Source Voltage VDS (V)

Typical Transfer Characteristics

	–10
		VDS = –10 V
	–8	Pulse Test
(A)
D
I	–6
Current
	–4
Drain			75°C
		TC = 25°C
	–2
		–25°C
	0	–1	–2	–3	–4	–5

Gate to Source Voltage VGS (V)

3