HITACHI 2SJ160, 2SJ161, 2SJ162 User Manual

2SJ160

2SJ160, 2SJ161, 2SJ162

Silicon P-Channel MOS FET

Application

Low frequency power amplifier

Complementary pair with 2SK1056, 2SK1057 and 2SK1058

Features

•Good frequency characteristic

•High speed switching

•Wide area of safe operation

•Enhancement-mode

•Good complementary characteristics

•Equipped with gate protection diodes

•Suitable for audio power amplifier

2SJ160, 2SJ161, 2SJ162

Outline

TO-3P

D

G

1

2

3

1. Gate

2. Source

(Flange)

S

3. Drain

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

2SJ160

VDSX

–120

V

2SJ161

–140

2SJ162

–160

Gate to source voltage

VGSS

±15

V

Drain current

ID

–7

A

Body to drain diode reverse drain current

IDR

–7

A

Channel dissipation

Pch*1

100

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note: 1. Value at TC = 25°C

2

2SJ160, 2SJ161, 2SJ162

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source

2SJ160

V(BR)DSX

–120

—

—

V

I

D = –10 mA , VGS = 10 V

breakdown voltage

2SJ161

–140

—

—

V

2SJ162

–160

—

—

V

Gate to source breakdown

V(BR)GSS

±15

—

—

V

I

G = ±100 A, VDS = 0

voltage

Gate to source cutoff voltage

VGS(off)

–0.15

—

–1.45

V

I D = –100 mA, VDS = –10 V

Drain to source saturation

V

—

—

–12

V

I

D

= –7 A, V

GD

= 0*1

voltage

DS(sat)

Forward transfer admittance

|y

fs

|

0.7

1.0

1.4

S

I

D

= –3 A, V

DS

= –10 V*1

Input capacitance

Ciss

—

900

—

pF

V

GS = 5 V, VDS = –10V,

Output capacitance

Coss

—

400

—

pF

f = 1 MHz

Reverse transfer capacitance

Crss

—

40

—

pF

Turn-on time

ton

—

230

—

ns

V

DD = –20 V, ID = –4 A

Turn-off time

toff

—

110

—

ns

Note: 1. Pulse test

3