HITACHI 2SJ130L, 2SJ130S User Manual
查询2SJ130(L), 2SJ130(S)供应商
2SJ130(L), 2SJ130(S)
Application
High speed power switching
Features
Silicon P-Channel MOS FET
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators
Outline
2SJ130(L), 2SJ130(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
resistance
Forward transfer admittance |yfs| 0.25 0.4 — S ID = –0.5 A, VDS = –20 V*
Input capacitance Ciss — 235 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 65 — pF f = 1 MHz
Reverse transfer capacitance Crss — 16 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note: 1. Pulse test
V
(BR)DSS
V
(BR)GSS
GSS
DSS
GS(off)
R
DS(on)
d(on)
r
d(off)
f
V
DF
t
rr
–300 — — V ID = –10 mA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
— — ±10 µA VGS = ±16 V, VDS = 0
— — –100 µA VDS = –240 V, VGS = 0
–2.0 — –4.0 V ID = –1 mA, VDS = –10 V
— 6.0 8.5 Ω ID = –0.5 A, VGS = –10 V*
— 10 — ns ID = –0.5 A, VGS = –10 V,
— 25 — ns RL = 60 Ω
— 35 — ns
— 45 — ns
— –0.9 — V IF = –1 A, VGS = 0
— 200 — ns IF = –1 A, VGS = 0,
–300 V
±20 V
–1 A
–2 A
–1 A
20 W
diF/dt = 50 A/µs
1
1
2
Loading...