HITACHI 2SJ130L, 2SJ130S User Manual

2SJ130(L), 2SJ130(S)

2SJ130(L), 2SJ130(S)

Silicon P-Channel MOS FET

Application

High speed power switching

Features

∙Low on-resistance

∙High speed switching

∙Low drive current

∙No secondary breakdown

∙Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators

Outline

2SJ130(L), 2SJ130(S)

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Drain to source voltage	VDSS	–300	V
Gate to source voltage	VGSS	±20	V
Drain current	ID	–1	A
Drain peak current	ID(pulse)	–2	A
Body to drain diode reverse drain current	IDR	–1	A
Channel dissipation	Pch*1	20	W
Channel temperature	Tch	150	°C
Storage temperature	Tstg	–55 to +150	°C
Note: 1. Value at TC = 25°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol			Min	Typ	Max	Unit	Test conditions
Drain to source breakdown	V(BR)DSS			–300	—	—	V	ID = –10 mA, VGS = 0
voltage
Gate to source breakdown	V(BR)GSS			±20	—	—	V	IG = ±100 µA, V DS = 0
voltage
Gate to source leak current	IGSS			—	—	±10	µA	VGS = ±16 V, VDS = 0
Zero gate voltage drain current	IDSS			—	—	–100	µA	VDS = –240 V, VGS = 0
Gate to source cutoff voltage	VGS(off)			–2.0	—	–4.0	V	ID = –1 mA, VDS = –10 V
Static drain to source on state	RDS(on)			—	6.0	8.5	Ω	ID = –0.5 A, VGS = –10 V*1
resistance
Forward transfer admittance	|y	fs	|	0.25	0.4	—	S	I	D	= –0.5 A, V = –20 V*1
										DS
Input capacitance	Ciss			—	235	—	pF	VDS = –10 V, VGS = 0,
Output capacitance	Coss			—	65	—	pF	f = 1 MHz
Reverse transfer capacitance	Crss			—	16	—	pF
Turn-on delay time	td(on)			—	10	—	ns	ID = –0.5 A, VGS = –10 V,
								RL = 60 Ω
Rise time	tr			—	25	—	ns
Turn-off delay time	td(off)			—	35	—	ns
Fall time	tf			—	45	—	ns
Body to drain diode forward	VDF			—	–0.9	—	V	IF = –1 A, VGS = 0
voltage
Body to drain diode reverse	trr			—	200	—	ns	IF = –1 A, VGS = 0,
recovery time								diF/dt = 50 A/µs

Note: 1. Pulse test

2