HITACHI 2SC3553 User Manual
Application
Low frequency amplifier
Outline
2SC3553
Silicon NPN Epitaxial
2SC3553
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
35 V
Collector to emitter voltage V
CEO
35 V
Emitter to base voltage V
EBO
4 V
Collector current I
C
500 mA
Collector power dissipation P
C
300 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter voltage V
Notes: 1. The 2SC3553 is grouped by h
2. Pulse test
B C D
60 to 120 100 to 200 160 to 320
See characteristic curves of 2SC1213.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
FE1
h
FE2
V
CE(sat)
BE
1
*
35 — — V IC = 10 µA, IE = 0
35 — — V IC = 1 mA, RBE = ∞
4 — — V IE = 10 µA, IC = 0
— — 0.5 µA VCB = 20 V, IE = 0
60 — 320 VCE = 3 V, IC = 10 mA
10 — — VCE = 3 V, IC = 500 mA*
— 0.2 0.6 V IC = 150 mA, IB = 15 mA*
— 0.64 — V VCE = 3 V, IC = 10 mA
as follows.
FE1
2
2
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