HITACHI 2SC3127, 2SC3128, 2SC3510 User Manual
查询2SC3127, 2SC3128, 2SC3510供应商
2SC3127, 2SC3128, 2SC3510
Silicon NPN Epitaxial
Application
UHF/VHF wide band amplifier
Outline
2SC3127, 2SC3128, 2SC3510
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC3127*
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
20 20 20 V
12 12 12 V
3 3 3 V
50 50 50 mA
150 350 600 mW
1
2SC3128 2SC3510 Unit
Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C
Note: 1. Marking for 2SC3127 is “ID–”.
2SC3127, 2SC3128, 2SC3510
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter cutoff current I
Collector cutoff current I
DC current transfer ratio h
Collector output capacitance Cob — 0.9 1.5 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f
Power gain PG — 10.5 — dB VCE = 5 V, IC = 20 mA,
Noise figure NF — 2.2 — dB VCE = 5 V, IC = 5 mA,
V
(BR)CBO
V
(BR)CEO
EBO
CBO
FE
T
20 — — V IC = 10 µA, IE = 0
12 — — V IC = 1 mA, RBE = ∞
— — 10 µA VEB = 3 V, IC = 0
— — 0.5 µA VCB = 12 V, IE = 0
30 90 200 VCE = 5 V, IC = 20 mA
3.5 4.5 — GHz VCE = 5 V, IC = 20 mA
f = 900 MHz
f = 900 MHz
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