HITACHI 2SC3127, 2SC3128, 2SC3510 User Manual

2SC3127, 2SC3128, 2SC3510

2SC3127, 2SC3128, 2SC3510

Silicon NPN Epitaxial

Application

UHF/VHF wide band amplifier

Outline

2SC3127, 2SC3128, 2SC3510

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	2SC3127* 1	2SC3128	2SC3510	Unit
Collector to base voltage	VCBO	20	20	20	V
Collector to emitter voltage	VCEO	12	12	12	V
Emitter to base voltage	VEBO	3	3	3	V
Collector current	IC	50	50	50	mA
Collector power dissipation	PC	150	350	600	mW
Junction temperature	Tj	150	150	150	°C
Storage temperature	Tstg	–55 to +150	–55 to +150	–55 to +150	°C

Note: 1. Marking for 2SC3127 is “ID–”.

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2SC3127, 2SC3128, 2SC3510

Electrical Characteristics (Ta = 25°C)

	Item	Symbol	Min	Typ	Max	Unit	Test conditions
	Collector to base breakdown	V(BR)CBO	20	—	—	V	IC = 10 µA, IE = 0
	voltage
	Collector to emitter breakdown	V(BR)CEO	12	—	—	V	IC = 1 mA, RBE = ∞
	voltage
	Emitter cutoff current	IEBO	—	—	10	µA	VEB = 3 V, IC =		0
	Collector cutoff current	ICBO	—	—	0.5	µA	VCB = 12 V, IE = 0
	DC current transfer ratio	hFE	30	90	200		VCE = 5 V, IC =		20 mA
	Collector output capacitance	Cob	—	0.9	1.5	pF	VCB = 5	V, IE = 0, f = 1 MHz
	Gain bandwidth product	fT	3.5	4.5	—	GHz	VCE = 5	V, IC =	20 mA
	Power gain	PG	—	10.5	—	dB	VCE = 5	V, IC =	20 mA,
							f = 900 MHz
	Noise figure	NF	—	2.2	—	dB	VCE = 5	V, IC =	5 mA,
							f = 900 MHz

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