
查询2SC3127, 2SC3128, 2SC3510供应商
2SC3127, 2SC3128, 2SC3510
Silicon NPN Epitaxial
Application
UHF/VHF wide band amplifier
Outline

2SC3127, 2SC3128, 2SC3510
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC3127*
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
20 20 20 V
12 12 12 V
3 3 3 V
50 50 50 mA
150 350 600 mW
1
2SC3128 2SC3510 Unit
Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C
Note: 1. Marking for 2SC3127 is “ID–”.

2SC3127, 2SC3128, 2SC3510
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter cutoff current I
Collector cutoff current I
DC current transfer ratio h
Collector output capacitance Cob — 0.9 1.5 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f
Power gain PG — 10.5 — dB VCE = 5 V, IC = 20 mA,
Noise figure NF — 2.2 — dB VCE = 5 V, IC = 5 mA,
V
(BR)CBO
V
(BR)CEO
EBO
CBO
FE
T
20 — — V IC = 10 µA, IE = 0
12 — — V IC = 1 mA, RBE = ∞
— — 10 µA VEB = 3 V, IC = 0
— — 0.5 µA VCB = 12 V, IE = 0
30 90 200 VCE = 5 V, IC = 20 mA
3.5 4.5 — GHz VCE = 5 V, IC = 20 mA
f = 900 MHz
f = 900 MHz

2SC3127, 2SC3128, 2SC3510

2SC3127, 2SC3128, 2SC3510

2SC3127, 2SC3128, 2SC3510

2SC3127, 2SC3128, 2SC3510

2SC3127, 2SC3128, 2SC3510
8
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any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
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