HITACHI 2SC1345K User Manual

查询2SC1345(K)供应商

Application

Low frequency low noise amplifier

Outline

2SC1345(K)

Silicon NPN Epitaxial

2SC1345 (K)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V

CBO

55 V

Collector to emitter voltage V

CEO

50 V

Emitter to base voltage V

EBO

5 V

Collector current I

C

100 mA

Collector power dissipation P

C

200 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test conditions

Collector to base breakdown
voltage

Collector to emitter breakdown
voltage

Emitter to base breakdown
voltage

Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Base to emitter voltage V
Collector to emitter saturation

voltage
Collector output capacitance Cob — 2.3 3.5 pF VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product f
Noise figure NF — — 8 dB VCE = 6 V, IC = 0.1 mA,

Note: 1. The 2SC1345(K) is grouped by hFE as follows.

D E F

250 to 500 400 to 800 600 to 1200

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

BE

V

CE(sat)

T

55 — — V IC = 10 µA, IE = 0

50 — — V IC = 1 mA, RBE = ∞

5 — — V IE = 10 µA, IC = 0

— — 0.5 µA V
— — 0.5 µA V

1

250 — 1200 V

= 18 V, IE = 0

CB

= 2 V, IC = 0

EB

= 12 V, IC = 2 mA

CE

— — 0.75 V VCE = 12 V, IC = 2 mA
— — 0.5 V IC = 10 mA, IB = 1 mA

— 230 — MHz VCE = 12 V, IC = 2 mA

f = 10 Hz, Rg = 10 kΩ

— — 1 dB VCE = 6 V, IC = 0.1 mA,

f = 1 kHz, Rg = 10 kΩ

2SC1345 (K)

3

2SC1345 (K)

4

2SC1345 (K)

5

2SC1345 (K)

6

2SC1345 (K)

7

2SC1345 (K)

8

When using this document, keep the following in mind:

1. This document may, wholly or partially, be subject to change without notice.

2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or

part of this document without Hitachi’s permission.

3. Hitachi will not be held responsible for any damage to the user that may result from accidents or

any other reasons during operation of the user’s unit according to this document.

4. Circuitry and other examples described herein are meant merely to indicate the characteristics and

performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.

5. No license is granted by implication or otherwise under any patents or other rights of any third party

or Hitachi, Ltd.

6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL

APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products
are requested to notify the relevant Hitachi sales offices when planning to use the products in
MEDICAL APPLICATIONS.