HITACHI 2SC1344, 2SC1345 User Manual

2SC1344, 2SC1345

Silicon NPN Epitaxial

Application

Low frequency low noise amplifier

Outline

2SC1344, 2SC1345

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	2SC1344	2SC1345	Unit
Collector to base voltage	VCBO	30	55	V
Collector to emitter voltage	VCEO	30	50	V
Emitter to base voltage	VEBO	5	5	V
Collector current	IC	100	100	mA

Collector power dissipation	PC	200	200	mW

Junction temperature	Tj	150	150	°C

Storage temperature	Tstg	–55 to +150	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

					2SC1344			2SC1345
Item		Symbol			Min	Typ	Max	Min	Typ	Max	Unit	Test conditions

Collector to base		V(BR)CBO			30	—	—	55	—	—	V	IC = –10 µA, IE = 0
breakdown voltage

Collector to emitter		V(BR)CEO			30	—	—	50	—	—	V	IC = 1 mA, RBE = ∞
breakdown voltage

Emitter to base		V(BR)EBO			5	—	—	5	—	—	V	IE = 10 µA, IC = 0
breakdown voltage

Collector cutoff current		ICBO			—	—	0.5	—	—	0.5	µA	VCB =18 V, IE = 0
Emitter cutoff current		IEBO			—	—	0.5	—	—	0.5	µA	VCB =			2 V, IC = 0
DC current transfer ratio h				*1	250	—	1200	250	—	1200		V	CE	=	12 V, I = 2 mA
			FE										CE		C
Base to emitter voltage		VBE			—	—	0.75	—	—	0.75	V	VCE =			12 V, IC = 2 mA
Collector to emitter		VCE(sat)			—	—	0.5	—	—	0.5	V	IC = 10 mA, IB = 1 mA
saturation voltage

Gain bandwidth product		fT			—	230	—	—	230	—	MHz	VCE =			12 V, IC = 2 mA

Collector output		Cob			—	—	3.5	—	—	3.5	pF	VCB =			10 V, IE = 0,
capacitance												f = 1 MHz

Noise figure		NF			—	—	8	—	—	8	dB	VCE =			6 V, IC = 0.1 mA,
												f = 10 Hz, Rg = 10 kΩ
					—	—	1	—	—	1	dB	VCE =			6 V, IC = 0.1 mA,
												f = 1 kHz, Rg = 10 kΩ
Note: 1.	The 2SC1344 and 2SC1345 are grouped by hFE as follows.
D	E			F

250 to 500	400 to 800			600 to 1200

2SC1344, 2SC1345

Small Signal h Parameters (VCE = 5V, IC = 0.1 mA, f = 270 Hz, Ta = 25°C, Emitter common)

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