查询2SC1344, 2SC1345供应商
Application
Low frequency low noise amplifier
Outline
2SC1344, 2SC1345
Silicon NPN Epitaxial
2SC1344, 2SC1345
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC1344 2SC1345 Unit
Collector to base voltage V
CBO
30 55 V
Collector to emitter voltage V
CEO
30 50 V
Emitter to base voltage V
EBO
5 5 V
Collector current I
C
100 100 mA
Collector power dissipation P
C
200 200 mW
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SC1344 2SC1345
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Noise figure NF — — 8 — — 8 dB V
Note: 1. The 2SC1344 and 2SC1345 are grouped by hFE as follows.
D E F
250 to 500 400 to 800 600 to 1200
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
BE
V
CE(sat)
T
30 — — 55 — — V IC = –10 µA, IE = 0
30 — — 50 — — V IC = 1 mA, RBE = ∞
5 — — 5 — — V IE = 10 µA, IC = 0
— — 0.5 — — 0.5 µA VCB =18 V, IE = 0
— — 0.5 — — 0.5 µA VCB = 2 V, IC = 0
1
250 — 1200 250 — 1200 VCE = 12 V, IC = 2 mA
— — 0.75 — — 0.75 V VCE = 12 V, IC = 2 mA
— — 0.5 — — 0.5 V IC = 10 mA, IB = 1 mA
— 230 — — 230 — MHz VCE = 12 V, IC = 2 mA
Cob — — 3.5 — — 3.5 pF VCB = 10 V, IE = 0,
— — 1 — — 1 dB V
f = 1 MHz
f = 10 Hz, Rg = 10 kΩ
f = 1 kHz, Rg = 10 kΩ
2SC1344, 2SC1345
3
Small Signal h Parameters (VCE = 5V, IC = 0.1 mA, f = 270 Hz, Ta = 25°C, Emitter
common)
Item Symbol D E F Unit
Input impedance hie 110 170 240 kΩ
Voltage feedback ratio hre 9.5 14.5 16 × 10
–4
Current transfer ratio hfe 340 540 825
Output admittance hoe 12.0 12.5 13.5 µS