Page 1
查询2SC1342供应商
Application
• VHF amplifier, mixer
• Local oscollator
2SC1342
Silicon NPN Epitaxial Planar
Outline
TO-92 (2)
1. Emitter
2. Collector
3. Base
3
2
1
Page 2
2SC1342
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
CBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Collector output capacitance Cob — 1.1 1.5 pF VCB = 10 V, IE = 0, f = 1 MHz
Base time constant r
Gain bandwidth product f
•C
bb’
T
Noise figure NF — 5.5 8.5 dB VCE = 6 V, IC = 1 mA,
Reverse transfer capacitance Cre — 0.9 1.2 pF VCE = 10 V, IE = –1 mA,
Power gain PG 13 17 — dB VCE = 6 V, IC = 1 mA,
Note: 1. The 2SC1342 is grouped by hFE as follows.
ABC
35 to 70 60 to 120 100 to 200
30 — — V IC = 10 µA, IE = 0
20 — — V IC = 1 mA, RBE = ∞
4——VI
— — 0.5 µAV
1
35 — 200 V
— 0.8 1.2 V IC = 10 mA, IB = 1 mA
—2035psVCB = 6 V, IC = 1 mA,
C
150 320 — MHz VCE = 6 V, IC = 1 mA
30 V
20 V
4V
30 mA
100 mW
= 10 µA, IC = 0
E
= 10 V, IE = 0
CB
= 6 V, IC = 1 mA
CE
f = 31.8 MHz
f = 100 MHz, R
= 50 Ω
g
f = 1 MHz
f = 100 MHz, R
R
= 550 Ω, Unneutralized
L
= 100 Ω,
g
2
Page 3
2SC1342
Maximum Collector Dissipation Curve
150
(mW)
C
100
50
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Typical Output Characteristics (2)
5
4
(mA)
C
3
50
40
30
20
2
Typical Output Characteristics (1)
20
200
240
180
160
140
120
100
(mA)
C
16
12
80
8
60
PC = 100 mW
40
Collector Current I
4
20 µA
IB = 0
15010050
0
41220816
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics (1)
20
16
(mA)
C
VCE = 6 V
12
8
1
Collector Current I
0
41220816
Collector to Emitter Voltage V
10 µA
IB = 0
CE
(V)
4
Collector Current I
0
0.60 0.64 0.68 0.72 0.76 0.80
Base to Emitter Voltage V
BE
(V)
3
Page 4
2SC1342
5
4
(mA)
C
3
Typical Transfer Characteristics (2)
VCE = 6 V
DC Current Transfer Ratio vs.
Collector Current
140
VCE = 6 V
120
FE
100
80
2
1
Collector Current I
0
0.60 0.64 0.68 0.72 0.76 0.80
Base to Emitter Voltage V
BE
(V)
Collector Output Capacitance vs.
Collector to Base Voltage
2.0
(pF)
1.8
ob
f = 1 MHz
I
= 0
E
1.6
1.4
1.2
1.0
0.8
Collector Output Capacitance C
0.6
0.1 0.2 0.5 1.0 2 5 10 20
Collector to Base Voltage V
CB
(V)
60
40
20
DC Current Transfer Ratio h
0
0.1 0.2 0.5 1.0 2 5 10 20
Collector Current I
(mA)
C
Reverse Transfer Capacitance vs.
Collector to Emitter Voltage
2.8
(pF)
2.4
re
2.0
1.6
f = 1 MHz
I
= –1 mA
E
1.2
0.8
0.4
Reverse Transfer Capacitance C
0
0.1 0.2 0.5 1.0 2 5 10 20
Collector to Emitter Voltage V
CE
(V)
4
Page 5
2SC1342
Reverse Transfer Capacitance
vs. Emitter Current
1.0
(pF)
re
0.8
0.6
0.4
VCE = 10 V
f = 1 MHz
0.2
Reverse Transfer Capacitance C
0
–0.1 –2–0.5–0.2 –1.0 –5
Emitter Current I
Noise Figure vs. Collector to
Emitter Voltage
14
12
10
8
6
4
Noise Figure NF (dB)
IC = 1 mA
f = 100 MHz
R
= 50 Ω
g
2
(mA)
E
Gain Bandwidth Product vs.
Collector Current
450
400
VCE = 6 V
350
(MHz)
T
300
250
200
150
100
50
Gain Bandwidth Product f
0
0.1 0.50.2 1.0 201052
Collector Current I
Noise Figure vs. Collector Current
12
10
8
6
4
Noise Figure NF (dB)
2
(mA)
C
VCE = 6 V
f = 100 MHz
= 50 Ω
R
g
0
0.1 20.50.2 1.0 20510
Collector to Emitter Voltage V
CE
(V)
Power Gain Test Circuit
IN
f = 100 MHz
300 p
Rg = 100 Ω
3 k
D.U.T.
500
V
0.01 µ
0.01 µ
EE
10 p
max
0
0.1 20.50.2 1.0 5 10
0.1 µ
Collector Current I
OUT
(mA)
C
RL = 550 Ω
V
0.01 µ
CC
Unit R : Ω
C : F
5
Page 6
2SC1342
Small Signal y Parameters (VCE = 6V, IC = 1 mA, Emitter Common Ta = 25°C)
Item Symbol f = 50 MHz f = 100 MHz f = 200 MHz Unit
Input admittance yie 1.8 + j5.5 4.3 + j9.9 11.5 + j15.25 mS
Reverse transfer admittance yre –0.022 – j0.26 –0.04 – j0.52 –0.105 – j0.96
Forward transfer admittance yfe 34 – j12 28 – j19 15.5 – j25
Output admittance yoe 0.1 + j0.5 0.15 + j0.9 0.21 + j1.45
Input Admittance vs. Frequency
28
24
yie = gie + jb
VCE = 6 V
20
(mS)
ie
16
12
3 mA
8
Input Suceptance b
2 mA
4
IC = 1 mA
0
64212 362418 30
ie
200
100
70
f = 50 MHz
5 mA
Input Conductance g
(mS)
ie
300
Forward Transfer Admittance vs. Frequency
Forward Transfer Conductance g
–20 0 20 40 60 80 100
(mS)
fe
–20
–40
–60
0
300
200
IC = 1 mA
yfe = gfe + jb
VCE = 6 V
2
3
100
70
–80
Forward Transfer Suceptance b
–100
f = 50 MHz
Reverse Transfer Admittance vs. Frequency
Reverse Transfer Conductance g
(mS)
re
–0.3 –0.25 –0.2 –0.15 –0.1 –0.05 0
f = 50 MHz
yre = gre + jb
VCE = 6 V
re
70
100
200
IC = 5 mA
300
2 1
3
Output Admittance vs. Frequency
(mS)
fe
fe
3.0
2.5
(mS)
oe
2.0
yoe = goe + jb
VCE = 6 V
oe
1.5
1.0
5
0.5
Output Suceptance b
IC = 1 mA
532
0
Output Conductance g
–0.4
–0.8
–1.2
–1.6
–2.0
300
200
100
70
f = 50 MHz
0.40.20.1 0.3 0.5 0.6
(mS)
oe
(mS)
re
Reverse Transfer Suceptance b
6
Page 7
2SC1342
Input Admittance vs. Collector
20
10
(mS)
ie
5
Yie = gie + jb
2
IC = 1 mA
Input Admittance y
f = 100 MHz
1
Collector to Emitter Voltage V
Forward Transfer Admittance vs.
Collector to Emitter Voltage
100
Yfe = gfe + jb
IC = 1 mA
f = 100 MHz
50
(mS)
fe
20
to Emitter Voltage
b
ie
g
ie
ie
fe
g
fe
b
fe
Reverse Transfer Admittance vs.
Collector to Emitter Voltage
–1.0
b
(mS)
–0.5
re
–0.2
Yre = gre + jb
IC = 1 mA
f = 100 MHz
re
re
–0.1
–0.05
g
re
–0.02
Reverse Transfer Admittance y
10 20512
(V)
CE
–0.01
10 20512
Collector to Emitter Voltage V
CE
(V)
Output Admittance vs. Collector to
Emitter Voltage
2.0
b
1.0
(mS)
oe
0.5
Yoe = goe + jb
I
= 1 mA
C
f = 100 MHz
oe
oe
10
Forward Transfer y
5
Collector to Emitter Voltage V
g
0.2
oe
Output Admittance y
0.1
10 20512
CE
(V)
Collector to Emitter Voltage V
10 20512
(V)
CE
7
Page 8
2SC1342
Input Admittance vs. Collector Current
50
20
(mS)
ie
10
5
2
Input Admittance y
1.0
0.5
Yie = gie + jb
VCE = 6 V
ie
f = 100 MHz
b
ie
g
ie
0.5 52101.00.1 0.2
Collector Current I
(mA)
C
Reverse Transfer Admittance vs.
Collector Current
–1.0
b
(mS)
–0.5
re
–0.2
Yre = gre + jb
VCE = 6 V
f = 100 MHz
re
re
–0.1
g
–0.05
re
–0.02
Reverse Transfer Admittance y
–0.01
1.0 2 5 100.50.1 0.2
Collector Current I
(mA)
C
Forward Transfer Admittance vs.
Collector Current
100
(mS)
50
fe
Yfe = gfe + jb
VCE = 6 V
fe
f = 100 MHz
20
g
10
5
fe
b
fe
2
Forward Transfer Admittance y
1
Collector Current I
(mA)
C
Output Admittance vs. Collector Current
5
2
(mS)
oe
1.0
0.5
b
oe
Yoe = goe + jb
VCE = 6 V
oe
f = 100 MHz
0.2
g
Output Admittance y
0.1
oe
0.05
1020.5 51.00.1 0.2
0.1 0.2 0.5 1.0 1052
Collector Current I
(mA)
C
8
Page 9
0.60 Max
0.45 ± 0.1
4.8 ± 0.3
3.8 ± 0.3
5.0 ± 0.2
0.7
2.3 Max
12.7 Min
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Unit: mm
Page 10
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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