Page 1
查询2SC1213AK供应商
Application
• Low frequency amplifier
• Medium speed switching
2SC1213A(K)
Silicon NPN Epitaxial
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
Page 2
2SC1213A (K)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
CBO
DC current transfer ratio hFE*
h
FE
Base to emitter voltage V
Collector to emitter saturation
V
BE
CE(sat)
voltage
Base to emitter satruation
V
BE(sat)
voltage
Collector output capacitance Cob — 7.0 — pF VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product f
Turn on time t
Turn off time t
Storage time t
T
on
off
stg
Notes: 1. The 2SC1213A(K) is grouped by hFE as follows.
2. Pulse test
BCD
60 to 120 100 to 200 160 to 320
50 — — V IC = 10 µA, IE = 0
50 — — V IC = 1.0 mA, RBE = ∞
4——VI
— — 0.5 µAV
1
60 — 320 V
10 — — V
0.64 — V V
— 0.12 0.6 V IC = 150 mA, IB = 15 mA*
— 0.83 1.2 V IC = 150 mA, IB = 15 mA*
— 120 — MHz V
— 0.25 — µSVCC = 10.3 V
— 0.85 — µS
— 0.4 — µSVCC = 5 V
50 V
50 V
4V
500 mA
400 mW
= 10 µA, IC = 0
E
= 20 V, IE = 0
CB
= 3 V, IC = 10 mA
CE
= 3 V, IC = 500 mA*
CE
= 3 V, IC = 10 mA
CE
= 3 V, IC = 10 mA
CE
I
= 10 IB1 = –10 IB2 = 10 mA
C
I
= IB1 = –IB2 = 20 mA
C
2
2
2
2
Page 3
2SC1213A (K)
Switching Time Test Circuit
, t
Test Circuit
t
on
off
6 k
50
P.G.
t
, tf ≤ 15 ns
r
PW ≥ 5 µs
–6 V
duty ratio ≤ 10%
13 V
Input
0
Output
0
Maximum Collector Dissipation Curve
500
(mW)
C
400
300
200
100
0
Collector Power Dissipation P
Ambient Temperature Ta (°C)
D.U.T.
0.002
–+
50
1 k
10.3 V
6 k
0.002
–+
50
Unit R : Ω
Response Waveform
10%
t
90%
d
10%
t
on
50
100 150
CRT
C : µF
90%
t
off
P.G.
t
≤ 5 ns
r
PW ≥ 5 µs
duty ratio ≤ 2%
90%
Switching Time Test Circuit
Test Circuit
t
stg
7 V
Output
Typical Output Characteristics (1)
500
400
(mA)
C
40
30
20
10
8
6
300
200
100
Collector Current I
0
12
Collector to Emitter Voltage V
D.U.T.
1.0
215
200
100
0.002
0.002
+–
–+
50
50
Response Waveform
0
Input
10%
9 V
0
10%
t
stg
5
4
3
2
P
= 400 mW
1 mA
C
345
I
240
5 V
B
= 0
CE
CRT
Unit R : Ω
C : F
(V)
3
Page 4
2SC1213A (K)
Typical Output Characteristics (2)
100
(mA)
C
80
60
0.9
0.8
0.7
0.6
0.5
40
20
Collector Current I
0
0.4
10 20
Collector to Emitter Voltage V
Collector Cutoff Current vs.
Collector to Base Voltage
100
100
30
(nA)
CBO
1.0
10
3
75
50
Ta = 25°C
0.3
0.1
Collector Current I
0.03
10020
Collector to Base Voltage V
0.3
0.2
0.1 mA
I
= 0
B
30 40 50
P
= 400 mW
C
30 40 50
(V)
CE
(V)
CB
Typical Transfer Characteristics
30
VCE = 3 V
10
(mA)
C
3
Ta = 75°C
1.0
Collector Current I
0.3
0
0.2 0.4
Base to Emitter Voltage V
DC Current Transfer Ratio vs.
Collector Current
140
VCE = 3 V
FE
120
100
75
50
25
80
60
0
Ta = –25°C
40
20
DC Current Transfer Ratio h
0
2 5 10 20
Collector Current I
25
–25
0.6 0.8 1.21.0
(V)
BE
50 100 200 500
(mA)
C
4
Page 5
2SC1213A (K)
Collector to Emitter Saturation
(V)
Voltage vs. Collector Current
0.32
0.28
IC = 10 I
B
CE(sat)
0.24
0.20
0.16
0.12
0.08
0.04
0
0.3 1.0 3
0.1
Collector to Emitter Saturation Voltage V
Collector Current I
10 30 100 300 1,000
(mA)
C
Input And Output Capacitance vs. Voltage
70
(pF)
60
ob
(pF)
ib
50
Cib(IC = 0)
40
30
20
10
Emitter input Capacitance C
Collector Output Capacitance C
0
0.3 1.0 3
0.1
Cob(IE = 0)
Collector to Base Voltage V
Emitter to Base Voltage V
f = 1 MHz
10 30
(V)
CB
(V)
EB
Base to Emitter Saturation Voltage vs.
(V)
BE(sat)
1.1
1.0
IC = 10 I
Pulse
Collector Current
B
0.9
0.8
0.7
–25
0
0.6
25
50
0.5
0.4
Base to Emitter Saturation Voltage V
Ta = 75°C
0.1 0.2 0.5 1.0 2 5
Collector Current IC (mA)
10 20 50 100 200 500
Gain Bandwidth Product vs.
Collector Current
280
240
(MHz)
T
200
160
120
80
40
Gain Bandwidth Product f
0
2
51020
Collector Current I
50 100 200 500
C
VCE = 3 V
(mA)
5
Page 6
2SC1213A (K)
Switching Time vs. Collector Current
1,000
500
200
100
50
Switching Time t (ns)
20
VCC = 10.3 V
I
= 10 IB1 = –10 I
C
10
5
10 20
Collector Current I
t
off
t
stg
t
on
t
B2
d
50 100 200 500
(mA)
C
6
Page 7
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
3.8 ± 0.3
5.0 ± 0.2
0.7
2.3 Max
12.7 Min
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Unit: mm
Page 8
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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