HITACHI 2SC1213, 2SC1213A User Manual
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2SC1213, 2SC1213A
Application
• Low frequency amplifier
• Complementary pair with 2SA673 and 2SA673A
Silicon NPN Epitaxial
Outline
2SC1213, 2SC1213A
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC1213 2SC1213A Unit
Collector to base voltage V
CBO
35 50 V
Collector to emitter voltage V
CEO
35 50 V
Emitter to base voltage V
EBO
4 4 V
Collector current I
C
500 500 mA
Collector power dissipation P
C
400 400 mW
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SC1213 2SC1213A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
DC current tarnsfer ratio hFE*
Collector to emitter
saturation voltage
Base to emitter voltage V
Notes: 1. The 2SC1213 and 2SC1213A are grouped by hFE as follows.
2. Pulse test
B C D
60 to 120 100 to 200 160 to 320
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
h
FE
V
CE(sat)
BE
35 — — 50 — — V IC = 10 µA, IE = 0
35 — — 50 — — V IC = 1 mA, RBE = ∞
4 — — 4 — — V IE = 10 µA, IC = 0
— — 0.5 — — 0.5 µA VCB = 20 V, IE = 0
1
60 — 320 60 — 320 VCE = 3 V, IC =10 mA
10 — — 10 — — VCE = 3 V,
— 0.2 0.6 — 0.2 0.6 V IC = 150 mA,
— 0.64 — — 0.64 — V VCE = 3 V, IC = 10 mA
IC = 500 mA*
IB = 15 mA*
2
2
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