HITACHI 2SC1213, 2SC1213A User Manual

2SC1213, 2SC1213A

2SC1213, 2SC1213A

Silicon NPN Epitaxial

Application

∙Low frequency amplifier

∙Complementary pair with 2SA673 and 2SA673A

Outline

2SC1213, 2SC1213A

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	2SC1213	2SC1213A	Unit
Collector to base voltage	VCBO	35	50	V
Collector to emitter voltage	VCEO	35	50	V
Emitter to base voltage	VEBO	4	4	V
Collector current	IC	500	500	mA
Collector power dissipation	PC	400	400	mW
Junction temperature	Tj	150	150	°C
Storage temperature	Tstg	–55 to +150	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

				2SC1213				2SC1213A
Item		Symbol		Min	Typ		Max	Min	Typ	Max	Unit	Test conditions
Collector to base		V(BR)CBO		35	—		—	50	—	—	V	IC = 10 µA, IE = 0
breakdown voltage
Collector to emitter		V(BR)CEO		35	—		—	50	—	—	V	IC = 1 mA, RBE = ∞
breakdown voltage
Emitter to base		V(BR)EBO		4	—		—	4	—	—	V	IE = 10 µA, IC = 0
breakdown voltage
Collector cutoff current		ICBO		—	—		0.5	—	—	0.5	µA	VCB = 20 V, IE = 0
DC current tarnsfer ratio h			*1	60	—		320	60	—	320		V	CE	= 3 V, I =10 mA
			FE											C
		hFE		10	—		—	10	—	—		VCE = 3 V,
												IC = 500 mA*2
Collector to emitter		VCE(sat)		—	0.2		0.6	—	0.2	0.6	V	IC = 150 mA,
saturation voltage												IB = 15 mA*2
Base to emitter voltage		VBE		—	0.64		—	—	0.64	—	V	VCE = 3 V, IC = 10 mA
Notes: 1. The 2SC1213 and 2SC1213A are grouped by hFE as follows.
2.	Pulse test
B	C		D
60 to 120	100 to 200		160 to 320

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