HITACHI 2SC1212, 2SC1212A User Manual

2SC1212,2SC1212A

2SC1212, 2SC1212A

Silicon NPN Epitaxial

Application

Low frequency power amplifier

Outline

Absolute Maximum Ratings (Ta = 25°C)

		Ratings
Item	Symbol	2SC1212	2SC1212A	Unit
Collector to base voltage	VCBO	50	80	V
Collector to emitter voltage	VCEO	50	80	V
Emitter to base voltage	VEBO	4	4	V
Collector current	IC	1	1	A
Collector power dissipation	PC	0.75	0.75	W
	PC*1	8	8	W
Junction temperature	Tj	150	150	°C
Storage temperature	Tstg	–55 to +150	–55 to +150	°C

Note: 1. Value at TC = 25°C

2SC1212, 2SC1212A

Electrical Characteristics (Ta = 25°C)

		2SC1212			2SC1212A
Item	Symbol	Min	Typ	Max	Min	Typ	Max	Unit	Test conditions
Collector to base	V(BR)CBO	50	—	—	80	—	—	V	IC = 1 mA, IE = 0
breakdown voltage
Collector to emitter	V(BR)CEO	50	—	—	80	—	—	V	IC = 10 mA, RBE = ∞
breakdown voltage
Emitter to base	V(BR)EBO	4	—	—	4	—	—	V	IE = 1 mA, IC = 0
breakdown voltage
Collector cutoff current	ICBO	—	—	5	—	—	5	µA	VCB =			50 V, IE = 0
DC current tarnsfer ratio h *1		60	—	200	60	—	200		V	CE	=	4 V, I = 50 mA
	FE											C
	hFE	20	—	—	20	—	—		VCE = 4 V, IC = 1 A
									(pulse test)
Base to emitter voltage	VBE	—	0.65	1.0	—	0.65	1.0	V	VCE =			4 V, IC = 50 mA
Collector to emitter	VCE(sat)	—	0.75	1.5	—	0.75	1.5	V	IC = 1 A, IB = 0.1 A
saturation voltage									(pulse test)
Gain bandwidth product	fT	—	160	—	—	160	—	MHz	VCE =			4 V, IC = 30 mA

Note: 1. The 2SC1212 and 2SC1212A are grouped by hFE as follows.

	B	C
	60 to 120	100 to 200

2