HITACHI 2SC1212, 2SC1212A User Manual
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2SC1212, 2SC1212A
Application
Low frequency power amplifier
Outline
Silicon NPN Epitaxial
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SC1212 2SC1212A Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C
C
PC*
CBO
CEO
EBO
C
1
50 80 V
50 80 V
4 4 V
1 1 A
0.75 0.75 W
8 8 W
2SC1212, 2SC1212A
2
Electrical Characteristics (Ta = 25°C)
2SC1212 2SC1212A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
DC current tarnsfer ratio hFE*
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Note: 1. The 2SC1212 and 2SC1212A are grouped by hFE as follows.
B C
60 to 120 100 to 200
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
h
FE
BE
V
CE(sat)
T
50 — — 80 — — V IC = 1 mA, IE = 0
50 — — 80 — — V IC = 10 mA, RBE = ∞
4 — — 4 — — V IE = 1 mA, IC = 0
— — 5 — — 5 µA VCB = 50 V, IE = 0
1
60 — 200 60 — 200 VCE = 4 V, IC = 50 mA
20 — — 20 — — VCE = 4 V, IC = 1 A
— 0.65 1.0 — 0.65 1.0 V VCE = 4 V, IC = 50 mA
— 0.75 1.5 — 0.75 1.5 V IC = 1 A, IB = 0.1 A
— 160 — — 160 — MHz VCE = 4 V, IC = 30 mA
(pulse test)
(pulse test)
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