HITACHI 2SB791K User Manual

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Application

Medium speed and power switching complementary pair with 2SD970(K)

Outline

2SB791(K)

Silicon PNP Epitaxial

TO-220AB

2

1

1. Base

2. Collector

1

2

3

(Flange)

3. Emitter

2 kΩ

(Typ)

200 Ω

(Typ)

3

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation PC*

CBO

CEO

EBO

C

C(peak)

1

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C

–120 V
–120 V
–7 V
–8 A
–12 A
40 W

2SB791(K)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter breakdown
voltage

Emitter to base breakdown
voltage

Collector cutoff current I

DC current transfer ratio h
Collector to emitter saturation V
voltage V
Base to emitter saturation V
voltage V
Turn on time t
Storage time t
Fall time t

Note: 1. Pulse test

V

(BR)CEO

V

(BR)EBO

CBO

I

CEO

FE

CE(sat)(1)

CE(sat)(2)

BE(sat)(1)

BE(sat)(2)

on

stg

f

–120 — — V IC = –25 mA, RBE = ∞

–7 — — V IE = –50 mA, IC = 0

— — –100 µAVCB = –120 V, IE = 0
— — –10 µAVCE = –100 V, RBE = ∞
1000 — 20000 VCE = –3 V, IC = –4 A*
— — –1.5 V IC = –4 A, IB = –8 mA*
— — –3.0 V IC = –8 A, IB = –80 mA*
— — –2.0 V IC = –4 A, IB = –8 mA*
— — –3.5 V IC = –8 A, IB = –80 mA*
— 0.5 — µsI

= –4 A, IB1 = IB2 = –8 mA

C

— 1.6 — µs
— 1.5 — µs

1

1

1

1

1

Maximum Collector Dissipation

Curve

60

(W)

C

40

20

Collector power dissipation P

0 50 100 150

Case temperature T

(°C)

C

Area of Safe Operation

–30

i

C(peak)

–10

I

(A)

C

Cmax

(Continuous)

–3

–1.0

–0.3

Collector current I

–0.1

Ta = 25°C
1 Shot Pulse

DC Operation

1 µs

10 µs

PW = 10 ms

1 ms

(T

C

= 25°C)

–0.03

–1 –10 –100 –1,000–3 –30 –300

Collector to emitter voltage V

CE

(V)

2