HITACHI 2SA1484 User Manual
查询2SA1484供应商
Application
Low frequency amplifier
Outline
2SA1484
Silicon PNP Epitaxial
2SA1484
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
–90 V
Collector to emitter voltage V
CEO
–90 V
Emitter to base voltage V
EBO
–5 V
Collector current I
C
–100 mA
Collector power dissipation P
C
150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Notes: 1. The 2SA1484 is grouped by hFE as follows.
2. Pulse test
Grade D E
Mark IRD IRE
h
FE
250 to 500 400 to 800
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
1
–90 — — V IC = –10 µA, IE = 0
–90 — — V IC = –1 mA, RBE = ∞
–5 — — V IE = –10 µA, IC = 0
— — –0.1 µA V
— — –0.1 µA V
250 — 800 V
= –70 V, IE = 0
CB
= –2 V, IC = 0
EB
= –12 V, IC = –2 mA*
CE
— — –0.15 V IC = –10 mA, IB = –1 mA*
— — –1.0 V IC = –10 mA, IB = –1 mA*
2
2
2
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