HITACHI 2SA1194K User Manual

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Application

High gain amplifier

Outline

2SA1194(K)

Silicon PNP Epitaxial

TO-126 MOD

2

3

1. Emitter

2. Collector

1

2

3

3. Base
1

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P

CBO

CEO

EBO

C

C(peak)

C

1

P

*

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C

–60 V
–60 V
–7 V
–1 A
–2 A
1W
8W

2SA1194(K)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter breakdown
voltage

Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter saturation

voltage
Base to emitter saturation

voltage
Turn on time t
Turn off time t

Note: 1. Pulse test

V

(BR)CEO

CBO

EBO

FE

V

CE(sat)

V

BE(sat)

on

off

–60 — — V IC = –1 mA, RBE = ∞

— — –1.0 µAVCB = –60 V, IE = 0
— — –1.0 µAVEB = –7 V, IC = 0
1000 — — V

= –3 V, IC = –500 mA*

CE

— — –2.0 V IC = –500 mA, IB = –1 mA*

— — –2.0 V

— 0.7 — µsI

= –500 mA

C

— 0.8 — µsIB1 = –IB2 = –1 mA

1

1

Maximum Collector Dissipation Curve

12

8

4

Collector power dissipation Pc (W)

0 50 150100

Case Temperature T

C

(°C)

–10

–3

iC

(peak)

(A)

C

–1.0

(max)

–0.3

–0.1

Collector Current I

–0.03

Ta = 25°C

–0.01

–0.1 –1.0 –100–30–10–3–0.3

Collector to emitter Voltage V

Area of Safe Operation

PW = 10 ms (1 Shot)IC

DC Operation

(T

C

= 25°C)

PW = 1 ms (1 Shot)

(V)

CE

2

Typical Output Characteristics

–1,000

TC = 25°C

–800

(mA)

C

–600

–400

–200

Collector Current I

–0.01

0–6–4 –8–2 –10

Collector to emitter Voltage V

–1.0

–0.8

–0.6

–0.4

–0.2

–0.1

–0.04

–0.02

–0.01 mA

CE

P

c

= 8 W

–0.08

–0.06

IB = 0

(V)

DC Current Transfer Ratio vs.

Collector Current

100,000

FE

30,000

Ta = 75°C

10,000

3,000

1,000

V

= –3 V

300

DC current transfer ratio h

100

–10 –1,000–300–100–30

CE

Pulse

Collector current I

25°C

2SA1194(K)

(mA)

C

Saturation Voltage vs. Collector Current

–10

lC = 500 l
Pulse

B

–3

Ta = 25°C

(V)

(V)

–1.0

BE (sat)

CE (sat)

V

V

–0.3

Base to emitter saturation voltage

Collector to emitter saturation voltage

–0.1

–10 –30 –100 –300 –1,000

75°C

Collector current I

Switching Time Test Circuit

V

IN

R

1

50

V
6 V

R

BB

≤

, t

10ns

t

r

f

≥

PW 10µs

duty ratio 10%

≤

V

IN

V

BE (sat)

V

CE (sat)

(mA)

C

l

B1

D.U.T.

l

B2

0.002 µ

0.002 µ

2

+–+–

Switching Time vs. Collector Current

10

3

t

1.0

0.3

0.1

off

t

stg

t

on

t

d

Switching time t (µs)

0.03
IC = 500 I

Ta = 25°C

0.01

–10 –30 –100 –300 –1,000

I

C

0

R

50 µ50 µ

Input

L

V

CC

–10 V

Output

0

t

d

B

Collector current I

Response Waveform

10%

10%
90%

t

on

(mA)

C

90%

t

stg

t

10%

90%

off

3

3.1

φ

+0.15
–0.1

8.0 ± 0.5

2.3 ± 0.3

1.1

3.7 ± 0.7

11.0 ± 0.5

15.6 ± 0.5

0.8

2.29 ± 0.5

2.29 ± 0.5

0.55

1.2

2.7 ± 0.4

120°

120°

120°

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-126 Mod
—
—

0.67 g

Unit: mm

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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