HITACHI 2SA1194K User Manual
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Application
High gain amplifier
Outline
2SA1194(K)
Silicon PNP Epitaxial
TO-126 MOD
2
3
1. Emitter
2. Collector
1
2
3
3. Base
1
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
1
P
*
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C
–60 V
–60 V
–7 V
–1 A
–2 A
1W
8W
2SA1194(K)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time t
Turn off time t
Note: 1. Pulse test
V
(BR)CEO
CBO
EBO
FE
V
CE(sat)
V
BE(sat)
on
off
–60 — — V IC = –1 mA, RBE = ∞
— — –1.0 µAVCB = –60 V, IE = 0
— — –1.0 µAVEB = –7 V, IC = 0
1000 — — V
= –3 V, IC = –500 mA*
CE
— — –2.0 V IC = –500 mA, IB = –1 mA*
— — –2.0 V
— 0.7 — µsI
= –500 mA
C
— 0.8 — µsIB1 = –IB2 = –1 mA
1
1
Maximum Collector Dissipation Curve
12
8
4
Collector power dissipation Pc (W)
0 50 150100
Case Temperature T
C
(°C)
–10
–3
iC
(peak)
(A)
C
–1.0
(max)
–0.3
–0.1
Collector Current I
–0.03
Ta = 25°C
–0.01
–0.1 –1.0 –100–30–10–3–0.3
Collector to emitter Voltage V
Area of Safe Operation
PW = 10 ms (1 Shot)IC
DC Operation
(T
C
= 25°C)
PW = 1 ms (1 Shot)
(V)
CE
2
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