HITACHI 2SA1194K User Manual
查询2SA1194(K)供应商
Application
High gain amplifier
Outline
2SA1194(K)
Silicon PNP Epitaxial
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C
CBO
CEO
EBO
C
C(peak)
C
PC*
1
–60 V
–60 V
–7 V
–1 A
–2 A
1 W
8 W
2SA1194(K)
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time t
Turn off time t
Note: 1. Pulse test
V
(BR)CEO
CBO
EBO
FE
V
CE(sat)
V
BE(sat)
on
off
–60 — — V IC = –1 mA, RBE = ∞
— — –1.0 µA VCB = –60 V, IE = 0
— — –1.0 µA VEB = –7 V, IC = 0
1000 — — V
= –3 V, IC = –500 mA*
CE
— — –2.0 V IC = –500 mA, IB = –1 mA*
— — –2.0 V
— 0.7 — µs IC = –500 mA
— 0.8 — µs IB1 = –IB2 = –1 mA
1
1
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