HITACHI 2SA1193K User Manual
查询2SA1193(K)供应商
Application
High gain amplifier
Outline
2SA1193(K)
Silicon PNP Epitaxial, Darlington
2SA1193(K)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
–60 V
Collector to emitter voltage V
CEO
–60 V
Emitter to base voltage V
EBO
–7 V
Collector current I
C
–0.5 A
Collector peak current i
C(peak)
–1.0 A
Collector power dissipation P
C
0.9 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time t
Turn off time t
Note: 1. Pulse test
V
(BR)CEO
CBO
EBO
FE
V
CE(sat)
V
BE(sat)
on
off
–60 — — V IC = –1 mA, RBE = ∞
— — –1.0 µA V
— — –1.0 µA V
2000 — — V
= –60 V, IE = 0
CB
= –7 V, IC = 0
EB
= –3 V, IC = –250 mA*
CE
— — –1.5 V IC = –250 mA, IB = –0.5 mA*
— — –2.0 V
— 0.3 — µs IC = –250 mA
— 0.9 — µs IB1 = –IB2 = –0.5 mA
1
1
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