HITACHI 2SA1188, 2SA1189 User Manual

2SA1188, 2SA1189

2SA1188, 2SA1189

Silicon PNP Epitaxial

Application

∙Low frequency amplifier

∙Complementary pair with 2SC2853 and 2SC2854

Outline

2SA1188, 2SA1189

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	2SA1188	2SA1189	Unit
Collector to base voltage	VCBO	–90	–120	V
Collector to emitter voltage	VCEO	–90	–120	V
Emitter to base voltage	VEBO	–5	–5	V
Collector current	IC	–100	–100	mA
Emitter current	IE	100	100	mA
Collector power dissipation	PC	400	400	mW
Junction temperature	Tj	150	150	°C
Storage temperature	Tstg	–55 to +150	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

		2SA1188			2SA1189
Item	Symbol	Min	Typ	Max	Min	Typ	Max	Unit	Test conditions
Collector to base	V(BR)CBO	–90	—	—	–120	—	—	V	IC = –10 µA, IE = 0
breakdown voltage
Collector to emitter	V(BR)CEO	–90	—	—	–120	—	—	V	IC = –1 mA, RBE = ∞
breakdown voltage
Emitter to base	V(BR)EBO	–5	—	—	–5	—	—	V	IE = –10 µA, IC = 0
breakdown voltage
Collector cutoff current	ICBO	—	—	–0.1	—	—	–0.1	µA	VCB = –70 V, IE = 0
Emitter cutoff current	IEBO	—	—	–0.1	—	—	–0.1	µA	VEB = –2 V, IC = 0
DC current trnsfer ratio	h *1	250	—	800	250	—	800		V	CE	= –12 V,
	FE
									IC = –2 mA*2
Collector to emitter	VCE(sat)	—	–0.05	–0.15	—	–0.05	–0.15 V		IC = –10 mA,
saturation voltage									IB = –1 mA*2
Base to emitter	VBE(sat)	—	–0.7	–1.0	—	–0.7	–1.0	V
saturation voltage
Gain bandwidth product	fT	—	130	—	—	130	—	MHz	VCE = –6 V,
									IC = –10 mA
Collector output	Cob	—	3.2	—	—	3.2	—	pF	VCB = –10 V, IE = 0,
capacitance									f = 1 MHz

Notes: 1. The 2SA1188 and 2SA1189 are grouped by hFE as follows. 2. Pulse test

D	E
250 to 500	400 to 800

See characteristic curves of 2SA1190 and 2SA1191.

2