HITACHI 2SA1188, 2SA1189 User Manual

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查询2SA1188, 2SA1189供应商
Application
Low frequency amplifier
Complementary pair with 2SC2853 and 2SC2854
2SA1188, 2SA1189
Silicon PNP Epitaxial
Outline
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2SA1188, 2SA1189
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current I Emitter cutoff current I DC current trnsfer ratio hFE*
Collector to emitter saturation voltage
Base to emitter saturation voltage
Gain bandwidth product f
Collector output capacitance
Notes: 1. The 2SA1188 and 2SA1189 are grouped by hFE as follows.
2. Pulse test
D E
250 to 500 400 to 800
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
T
–90 –120 — V IC = –10 µA, IE = 0
–90 –120 — V IC = –1 mA, RBE =
–5 –5 V IE = –10 µA, IC = 0
–0.1 –0.1 µA VCB = –70 V, IE = 0 — –0.1 –0.1 µA VEB = –2 V, IC = 0
1
250 800 250 800 VCE = –12 V,
–0.05 –0.15 — –0.05 –0.15 V IC = –10 mA,
–0.7 –1.0 –0.7 –1.0 V
130 130 MHz VCE = –6 V,
Cob 3.2 3.2 pF VCB = –10 V, IE = 0,
IC = –2 mA*
IB = –1 mA*
IC = –10 mA
f = 1 MHz
2
2
See characteristic curves of 2SA1190 and 2SA1191.
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2SA1188, 2SA1189
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2SA1188, 2SA1189
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