HITACHI 2SA1188, 2SA1189 User Manual
查询2SA1188, 2SA1189供应商
Application
• Low frequency amplifier
• Complementary pair with 2SC2853 and 2SC2854
2SA1188, 2SA1189
Silicon PNP Epitaxial
Outline
2SA1188, 2SA1189
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA1188 2SA1189 Unit
Collector to base voltage V
CBO
–90 –120 V
Collector to emitter voltage V
CEO
–90 –120 V
Emitter to base voltage V
EBO
–5 –5 V
Collector current I
C
–100 –100 mA
Emitter current I
E
100 100 mA
Collector power dissipation P
C
400 400 mW
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SA1188 2SA1189
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current trnsfer ratio hFE*
Collector to emitter
saturation voltage
Base to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Notes: 1. The 2SA1188 and 2SA1189 are grouped by hFE as follows.
2. Pulse test
D E
250 to 500 400 to 800
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
T
–90 — — –120 — — V IC = –10 µA, IE = 0
–90 — — –120 — — V IC = –1 mA, RBE = ∞
–5 — — –5 — — V IE = –10 µA, IC = 0
— — –0.1 — — –0.1 µA VCB = –70 V, IE = 0
— — –0.1 — — –0.1 µA VEB = –2 V, IC = 0
1
250 — 800 250 — 800 VCE = –12 V,
— –0.05 –0.15 — –0.05 –0.15 V IC = –10 mA,
— –0.7 –1.0 — –0.7 –1.0 V
— 130 — — 130 — MHz VCE = –6 V,
Cob — 3.2 — — 3.2 — pF VCB = –10 V, IE = 0,
IC = –2 mA*
IB = –1 mA*
IC = –10 mA
f = 1 MHz
2
2
See characteristic curves of 2SA1190 and 2SA1191.
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