HITACHI 2SA1122 User Manual
查询2SA1122供应商
Application
Low frequency amplifier
Outline
2SA1122
Silicon PNP Epitaxial
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SA1122
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Base to emitter voltage V
BE
Note: 1. The 2SA1122 is grouped by hFE as follows.
Grade B C D
Mark CC CD CE
h
FE
160 to 320 250 to 500 400 to 800
–55 — — V IC = –10 µA, IE = 0
–55 — — V IC = –1 mA, RBE = ∞
–5 — — V IE = –10 µA, IC = 0
— — –0.5 µAV
— — –0.5 µAVEB = –2 V, IC = 0
1
160 — 800 V
— — –0.5 V IC = –10 mA, IB = –1 mA
— — –0.75 V VCE = –12 V, IC = –2 mA
–55 V
–55 V
–5 V
–100 mA
150 mW
= –30 V, IE = 0
CB
= –12 V, IC = –2 mA
CE
See characteristic curves of 2SA836.
2
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