HITACHI 2SA1083, 2SA1084, 2SA1085 User Manual

查询2SA1083供应商

Application

• Low frequency low noise amplifier

• Complementary pair with 2SC2545, 2SC2546 and 2SC2547

2SA1083, 2SA1084, 2SA1085

Silicon PNP Epitaxial

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SA1083, 2SA1084, 2SA1085

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol 2SA1083 2SA1084 2SA1085 Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P

CBO

CEO

EBO

C

E

C

Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C

–60 –90 –120 V
–60 –90 –120 V
–5 –5 –5 V
–100 –100 –100 mA
100 100 100 mA
400 400 400 mW

2

2SA1083, 2SA1084, 2SA1085

Electrical Characteristics (Ta = 25°C)

2SA1083 2SA1084 2SA1085

Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions

Collector to base
breakdown voltage

Collector to emitter
breakdown voltage

Emitter to base
breakdown voltage

Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*

Collector to emitter
saturation voltage

Base to emitter voltage V

Gain bandwidth product f

Collector output
capacitance

Noise voltage reffered
to input

Note: 1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by hFE as follows.

DE

250 to 500 400 to 800

V

V

–60 — — –90 — — –120 — — V IC = –10 µA, IE = 0

(BR)CBO

–60 — — –90 — — –120 — — V IC = –1 mA,

(BR)CEO

RBE = ∞

V

CBO

EBO

–5 — — –5 — — –5 — — V IE = –10 µA, IC = 0

(BR)EBO

— — –0.1 — — –0.1 — — –0.1 µAVCB = –50 V, IE = 0
— — –0.1 — — –0.1 — — –0.1 µAVEB = –2 V, IC = 0

1

250 — 800 250 — 800 250 — 800 VCE = –12 V,

IC = –2 mA

V

— — –0.2 — — –0.2 — — –0.2 V IC = –10 mA,

CE(sat)

IB = –1 mA

— –0.6 — — –0.6 — — –0.6 — V VCE = –12 V,

BE

IC = –2 mA

T

—90— —90— —90— MHzVCE = –12 V,

IC = –2 mA

Cob — 3.5 — — 3.5 — — 3.5 — pF VCB = –10 V, IE = 0,

f = 1 MHz

e

— 0.5 — — 0.5 — — 0.5 — nV/

n

√Hz

VCE = –6V,
IC = –10 mA,
f = 1 kHz,
Rg = 0, ∆f = 1Hz

3

2SA1083, 2SA1084, 2SA1085

Maximum Collector Dissipation Curve

600

(mW)

C

400

200

Collector power dissipation P

0 50 100

Ambient Temperature Ta (°C)

Typical Output Characteristics (2)

–20

–35

–16

(mA)

C

–12

–40

–30

–25
–20

–15

–8

–10

150

Typical Output Characteristics (1)

–50

–120

–40

(mA)

C

–30

–140

–100

–80

–60

–40

–20

–20 µA

–10

Collector current I

IB = 0

0 –4 –12 –20–8 –16

Collector to Emitter Voltage V

Typicaol Transfer Characteristics

–10

–5

(mA)

C

–2

–1.0

–0.5

P

C

= 0.4 W

(V)

CE

VCE = –12 V

–4

Collector current I

0–4–8

Collector to Emitter Voltage V

–5 µA

IB = 0

–12 –16 –20

CE

(V)

Collector Current I

–0.2

–0.1

0 –0.4 –0.8–0.2 –0.6 –1.0

Base to Emitter Voltage V

BE

(V)

4

2SA1083, 2SA1084, 2SA1085

DC Current Transfer Ratio vs.

Collector Current

5,000

FE

2,000

1,000

500

200

100

DC current teransfer ratio h

50

–0.1 –1.0 –10 –100–3 –30–0.3

Collector Current I

Base to Emitter Saturation Voltage

vs. Collector Current

–10

–5

–2

(V)

–1.0

BE(sat)

V

–0.5

VCE = –12 V
Pulse

(mA)

C

IC = 10 I

Collector to Emitter Saturation

Voltage vs. Collector Current

–1.0

IC = 10 I

B

–0.5

–0.2

(V)

–0.1

CE(sat)

V

–0.05

–0.02

Collector to emitter saturation voltage

–0.01

–1 –5–2 –20 –100–10 –50

Collector Current I

(mA)

C

Gain Bandwidth Product vs.

Collector Current

2,000

B

VCE = –12 V

1,000

(MHz)

T

500

200

100

–0.2

Base to emitter saturation voltage

–0.1

–1 –5–2 –20 –100–10 –50

Collector Current I

(mA)

C

50

Gain bandwidth product f

20

–1 –5 –20 –100–2 –10 –50

Collector Current I

(mA)

C

5

2SA1083, 2SA1084, 2SA1085

Collector Output Capacitance vs.

Collector to Base Voltage

100

(pF)

50

ob

20

10

5

2

Collector output capacitance C

1

–0.5 –2 –10 –50–1.0 –5 –20

Collector to Base Voltage V

Contours of Constant Noise Figure (2)

100

30

(kΩ)

g

10

3

1.0
NF = 0.5 dB

0.3

0.1

0.03

Singnal source resistance R

0.01
–0.01 –0.1

–0.03 –0.3

–1.0 –10 –100

–3 –30

Collector Current IC (mA)

IE = 0
f = 1 MHz

(V)

CB

VCE = –6 V
f = 120 Hz

1

2 4 6

10

Contours of Constant Noise Figure (1)

100

30

(kΩ)

g

10

3

1.0

0.3

0.1

NF = 0.5 dB

1
2

4
6

0.03

Singnal source resistance R

0.01
–0.01 –0.1

10

–0.03 –0.3

–1.0 –10 –100

Collector Current IC (mA)

Contours of Constant Noise Figure (3)

100

30

(kΩ)

g

10

3

NF = 0.5 dB

1.0

0.3

0.1

0.03

Singnal source resistance R

0.01
–0.01 –0.1

–0.03 –0.3

–1.0 –10 –100

Collector Current IC (mA)

V

= –6 V

CE

f = 1 kHz

–3 –30

VCE = –6 V
f = 10 Hz

1

2 4 6 10

–3 –30

6

0.60 Max

0.5 ± 0.1

4.8 ± 0.3

3.8 ± 0.3

5.0 ± 0.2

0.7

2.3 Max

12.7 Min

0.5

1.27

2.54

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-92 (1)
Conforms
Conforms

0.25 g

Unit: mm

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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