Page 1
查询2SA1083供应商
Application
• Low frequency low noise amplifier
• Complementary pair with 2SC2545, 2SC2546 and 2SC2547
2SA1083, 2SA1084, 2SA1085
Silicon PNP Epitaxial
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
Page 2
2SA1083, 2SA1084, 2SA1085
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA1083 2SA1084 2SA1085 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C
–60 –90 –120 V
–60 –90 –120 V
–5 –5 –5 V
–100 –100 –100 mA
100 100 100 mA
400 400 400 mW
2
Page 3
2SA1083, 2SA1084, 2SA1085
Electrical Characteristics (Ta = 25°C)
2SA1083 2SA1084 2SA1085
Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output
capacitance
Noise voltage reffered
to input
Note: 1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by hFE as follows.
DE
250 to 500 400 to 800
V
V
–60 — — –90 — — –120 — — V IC = –10 µA, IE = 0
(BR)CBO
–60 — — –90 — — –120 — — V IC = –1 mA,
(BR)CEO
RBE = ∞
V
CBO
EBO
–5 — — –5 — — –5 — — V IE = –10 µA, IC = 0
(BR)EBO
— — –0.1 — — –0.1 — — –0.1 µAVCB = –50 V, IE = 0
— — –0.1 — — –0.1 — — –0.1 µAVEB = –2 V, IC = 0
1
250 — 800 250 — 800 250 — 800 VCE = –12 V,
IC = –2 mA
V
— — –0.2 — — –0.2 — — –0.2 V IC = –10 mA,
CE(sat)
IB = –1 mA
— –0.6 — — –0.6 — — –0.6 — V VCE = –12 V,
BE
IC = –2 mA
T
—90— —90— —90— MHzVCE = –12 V,
IC = –2 mA
Cob — 3.5 — — 3.5 — — 3.5 — pF VCB = –10 V, IE = 0,
f = 1 MHz
e
— 0.5 — — 0.5 — — 0.5 — nV/
n
√Hz
VCE = –6V,
IC = –10 mA,
f = 1 kHz,
Rg = 0, ∆f = 1Hz
3
Page 4
2SA1083, 2SA1084, 2SA1085
Maximum Collector Dissipation Curve
600
(mW)
C
400
200
Collector power dissipation P
0 50 100
Ambient Temperature Ta (°C)
Typical Output Characteristics (2)
–20
–35
–16
(mA)
C
–12
–40
–30
–25
–20
–15
–8
–10
150
Typical Output Characteristics (1)
–50
–120
–40
(mA)
C
–30
–140
–100
–80
–60
–40
–20
–20 µA
–10
Collector current I
IB = 0
0 –4 –12 –20–8 –16
Collector to Emitter Voltage V
Typicaol Transfer Characteristics
–10
–5
(mA)
C
–2
–1.0
–0.5
P
C
= 0.4 W
(V)
CE
VCE = –12 V
–4
Collector current I
0–4–8
Collector to Emitter Voltage V
–5 µA
IB = 0
–12 –16 –20
CE
(V)
Collector Current I
–0.2
–0.1
0 –0.4 –0.8–0.2 –0.6 –1.0
Base to Emitter Voltage V
BE
(V)
4
Page 5
2SA1083, 2SA1084, 2SA1085
DC Current Transfer Ratio vs.
Collector Current
5,000
FE
2,000
1,000
500
200
100
DC current teransfer ratio h
50
–0.1 –1.0 –10 –100–3 –30–0.3
Collector Current I
Base to Emitter Saturation Voltage
vs. Collector Current
–10
–5
–2
(V)
–1.0
BE(sat)
V
–0.5
VCE = –12 V
Pulse
(mA)
C
IC = 10 I
Collector to Emitter Saturation
Voltage vs. Collector Current
–1.0
IC = 10 I
B
–0.5
–0.2
(V)
–0.1
CE(sat)
V
–0.05
–0.02
Collector to emitter saturation voltage
–0.01
–1 –5–2 –20 –100–10 –50
Collector Current I
(mA)
C
Gain Bandwidth Product vs.
Collector Current
2,000
B
VCE = –12 V
1,000
(MHz)
T
500
200
100
–0.2
Base to emitter saturation voltage
–0.1
–1 –5–2 –20 –100–10 –50
Collector Current I
(mA)
C
50
Gain bandwidth product f
20
–1 –5 –20 –100–2 –10 –50
Collector Current I
(mA)
C
5
Page 6
2SA1083, 2SA1084, 2SA1085
Collector Output Capacitance vs.
Collector to Base Voltage
100
(pF)
50
ob
20
10
5
2
Collector output capacitance C
1
–0.5 –2 –10 –50–1.0 –5 –20
Collector to Base Voltage V
Contours of Constant Noise Figure (2)
100
30
(kΩ)
g
10
3
1.0
NF = 0.5 dB
0.3
0.1
0.03
Singnal source resistance R
0.01
–0.01 –0.1
–0.03 –0.3
–1.0 –10 –100
–3 –30
Collector Current IC (mA)
IE = 0
f = 1 MHz
(V)
CB
VCE = –6 V
f = 120 Hz
1
2 4 6
10
Contours of Constant Noise Figure (1)
100
30
(kΩ)
g
10
3
1.0
0.3
0.1
NF = 0.5 dB
1
2
4
6
0.03
Singnal source resistance R
0.01
–0.01 –0.1
10
–0.03 –0.3
–1.0 –10 –100
Collector Current IC (mA)
Contours of Constant Noise Figure (3)
100
30
(kΩ)
g
10
3
NF = 0.5 dB
1.0
0.3
0.1
0.03
Singnal source resistance R
0.01
–0.01 –0.1
–0.03 –0.3
–1.0 –10 –100
Collector Current IC (mA)
V
= –6 V
CE
f = 1 kHz
–3 –30
VCE = –6 V
f = 10 Hz
1
2 4 6 10
–3 –30
6
Page 7
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
3.8 ± 0.3
5.0 ± 0.2
0.7
2.3 Max
12.7 Min
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Unit: mm
Page 8
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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products.
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