HITACHI 2SA1052 User Manual
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Application
Low frequency amplifier
Outline
2SA1052
Silicon PNP Epitaxial
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SA1052
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Base to emitter voltage V
BE
Note: 1. The 2SA1052 is grouped by hFE as follows.
Grade B C D
Mark MB MC MD
h
FE
100 to 200 160 to 320 250 to 500
–30 — — V IC = –10 µA, IE = 0
–30 — — V IC = –1 mA, RBE = ∞
–5 — — V IE = –10 µA, IC = 0
— — –0.5 µAV
— — –0.5 µAV
1
100 — 500 V
— — –0.2 V IC = –10 mA, IB = –1 mA
— — –0.75 V VCE = –12 V, IC = –2 mA
–30 V
–30 V
–5 V
–100 mA
100 mA
150 mW
= –20 V, IE = 0
CB
= –2 V, IC = 0
EB
= –12 V, IC = –2 mA
CE
See characteristic curves of 2SA1031.
2
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