HITACHI 2SA1031, 2SA1032 User Manual

2SA1031

2SA1031, 2SA1032

Silicon PNP Epitaxial

Application

•Low frequency low noise amplifier

•Complementary pair with 2SC458 (LG) and 2SC2310

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SA1031, 2SA1032

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

2SA1031

2SA1032

Unit

Collector to base voltage

VCBO

–30

–55

V

Collector to emitter voltage

VCEO

–30

–50

V

Emitter to base voltage

VEBO

–5

–5

V

Collector current

IC

–100

–100

mA

Emitter current

IE

100

100

mA

Collector power dissipation

PC

300

300

mW

Junction temperature

Tj

150

150

°C

Storage temperature

Tstg

–55 to +150

–55 to +150

°C

2

2SA1031, 2SA1032

Electrical Characteristics (Ta = 25°C)

2SA1031

2SA1032

Item

Symbol

Min

Typ

Max

Min

Typ Max

Unit

Test conditions

Collector to base

V(BR)CBO

–30

—

—

–55

—

—

V

I

C = –10 µA, IE = 0

breakdown voltage

Collector to emitter

V(BR)CEO

–30

—

—

–50

—

—

V

I

C = –1 mA, RBE = ∞

breakdown voltage

Emitter to base

V(BR)EBO

–5

—

—

–5

—

—

V

I

E = –10 µA, IC = 0

breakdown voltage

Collector cutoff current

ICBO

—

—

–0.5

—

—

–0.5

µA

VCB = –18 V, IE = 0

Emitter cutoff current

IEBO

—

—

–0.5

—

—

–0.5

µA

VEB = –2 V, IC = 0

DC current trnsfer ratio

h *1

100

—

500

100

—

320

V

CE

= –12 V,

FE

IC = –2 mA

Base to emitter voltage

VBE

—

—

–0.8

—

—

–0.8

V

V

CE = –12 V,

IC = –2 mA

Collector to emitter

VCE(sat)

—

—

–0.2

—

—

–0.2

V

I

C = –10 mA,

saturation voltage

IB = –1 mA

Gain bandwidth product

fT

200

280

—

200

280

—

MHz

V

CE = –12 V,

IC = –2 mA

Collector output

Cob

—

3.3

4.0

—

3.3

4.0

pF

V

CB = –10 V, IE = 0,

capacitance

f = 1 MHz

Noise figure

NF

—

—

5

—

—

5

dB

V

CE = –6 V,

IC = –0.1 mA,

Rg = 500 Ω,

f = 120 Hz

Note: 1. The 2SA1031 and 2SA1032 are grouped by hFE as follows.

B

C

D

2SA1031

100 to 200

160 to 320

250 to 500

2SA1032

100 to 200

160 to 320

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