HITACHI 2SA1031, 2SA1032 User Manual
查询2SA1031, 2SA1032供应商
Application
• Low frequency low noise amplifier
• Complementary pair with 2SC458 (LG) and 2SC2310
2SA1031, 2SA1032
Silicon PNP Epitaxial
Outline
2SA1031, 2SA1032
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA1031 2SA1032 Unit
Collector to base voltage V
CBO
–30 –55 V
Collector to emitter voltage V
CEO
–30 –50 V
Emitter to base voltage V
EBO
–5 –5 V
Collector current I
C
–100 –100 mA
Emitter current I
E
100 100 mA
Collector power dissipation P
C
300 300 mW
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SA1031 2SA1032
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current trnsfer ratio hFE*
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Noise figure NF — — 5 — — 5 dB VCE = –6 V,
Note: 1. The 2SA1031 and 2SA1032 are grouped by hFE as follows.
B C D
2SA1031 100 to 200 160 to 320 250 to 500
2SA1032 100 to 200 160 to 320 —
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
BE
V
CE(sat)
T
–30 — — –55 — — V IC = –10 µA, IE = 0
–30 — — –50 — — V IC = –1 mA, RBE = ∞
–5 — — –5 — — V IE = –10 µA, IC = 0
— — –0.5 — — –0.5 µA VCB = –18 V, IE = 0
— — –0.5 — — –0.5 µA VEB = –2 V, IC = 0
1
100 — 500 100 — 320 VCE = –12 V,
— — –0.8 — — –0.8 V VCE = –12 V,
— — –0.2 — — –0.2 V IC = –10 mA,
200 280 — 200 280 — MHz VCE = –12 V,
Cob — 3.3 4.0 — 3.3 4.0 pF VCB = –10 V, IE = 0,
IC = –2 mA
IC = –2 mA
IB = –1 mA
IC = –2 mA
f = 1 MHz
IC = –0.1 mA,
Rg = 500 Ω,
f = 120 Hz
Loading...