HIT HZU6.8Z Datasheet

HZU6.8Z

Silicon Epitaxial Planar Zener Diode for Surge Absorb

Features

• Low capacitance (C=25pF max) and can protect ESD of signal line.

• Ultra small Resin Package (URP) is suitable for surface mount design.

Ordering Information

Type No. Laser Mark Package Code

HZU6.8Z 68Z URP

ADE-208-777(Z)

Rev 0

Feb. 1999

Outline

Cathode mark

Mark

12

68Z

1. Cathode

2. Anode

HZU6.8Z

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Power dissipation Pd

*1

Junction temperature Tj 150 °C
Storage temperature Tstg -55 to +150 °C

Note 1. See Fig.2.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Zener voltage V
Reverse current I

Z

R

Capacitance C 25 pF VR = 0V, f = 1 MHz
Dynamic resistance r
ESD-Capability

*2

d

 20 kV C =150pF, R = 330 Ω, Both forward and

Notes 1. Failure criterion ; IR > 2 µA at VR = 3.5V.

6.47  7.00 V IZ = 5 mA, 40ms pulse

2 µAVR =3.5V

30 Ω IZ = 5 mA

200 mW

reverse direction 10 pulse

2