HIT HZU6.2Z Datasheet
HZU6.2Z
Silicon Epitaxial Planar Zener Diode for Surge Absorb
Features
• Low capacitance (C=8.5pF max) and can protect ESD of signal line.
• Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No. Laser Mark Package Code
HZU6.2Z 62Z URP
ADE-208-581(Z)
Rev 0
Oct. 1997
Outline
Cathode mark
Mark
12
62Z
1. Cathode
2. Anode
HZU6.2Z
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Power dissipation Pd
*1
Junction temperature Tj 150 °C
Storage temperature Tstg -55 to +150 °C
Note 1. Two device total, See Fig.2.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Zener voltage V
Reverse current I
Z
R
Capacitance C — 8.0 8.5 pF VR = 0V, f = 1 MHz
Dynamic resistance r
d
5.90 — 6.50 V IZ = 5 mA, 40ms pulse
——3 µAVR = 5.5V
——60Ω IZ = 5 mA
200 mW
2
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